| PART |
Description |
Maker |
| MDD56-08N1B MDD56-12N1B MDD56-14N1B MDD56-16N1B MD |
Diode Modules 71 A, 1800 V, SILICON, RECTIFIER DIODE, TO-240AA
CHOKE, DIFF/SYM MODE 2X55UH 2ACHOKE, DIFF/SYM MODE 2X55UH 2A; Inductance:55uH; Inductor type:Differential/Symmetrical; Current, DC max:2A; Resistance:0.07R; Case style:RS522; Frequency, resonant:7MHz; Voltage rating, AC:250V;
CHOKE, DIFF/SYM MODE 2X8UH 4ACHOKE, DIFF/SYM MODE 2X8UH 4A; Inductance:8uH; Inductor type:Differential/Symmetrical; Current, DC max:4A; Resistance:0.02R; Case style:RS614; Frequency, resonant:22MHz; Voltage rating, AC:250V; Approval
Thyristor and Rectifiers Modules
|
IXYS, Corp.
IXYS Corporation
|
| MGFC42V4450A C424450A |
From old datasheet system
4.4~5.0GHz BAND 16W INTERNALLY MATCHED GaAs FET
4.4 - 5.0GHz BAND 16W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| TA044-050-40-43 |
4.4 ~ 5.0GHz 20W High PowerAmplifier
|
Transcom, Inc.
|
| SMS-331-04DT SMS-331-05DT SMS-331-01DT SMS-331-02D |
PIN Diode Switches 0.5 to 18.0GHz Non-Reflective
|
List of Unclassifed Manufacturers
|
| EIA5060-1S |
5.0-6.0GHz 1W Internally Matched Power FET
|
Excelics Semiconductor
|
| SP5026 SP5026SMP SP5026DP |
1.0GHz 3-Wire Bus Controlled Synthesizer
|
ZARLINK[Zarlink Semiconductor Inc]
|
| MGFC40V4450_04 MGFC40V4450 MGFC40V445004 |
4.4 ~ 5.0GHz BAND 10 W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| HM6P5331 |
HM6P5331 - 2.0GHz/500MHz Dual Frequency Synthesizer
|
HYNIX[Hynix Semiconductor]
|
| TIM4450-16UL09 |
HIGH POWER P1dB=42.5dBm at 4.4GHz to 5.0GHz
|
Toshiba Semiconductor
|
| TIM4450-25UL |
HIGH POWER P1dB=44.5dBm at 4.4GHz to 5.0GHz
|
Toshiba Semiconductor
|
| SY55851UKITR SY55851UKG SY55851AUKG SY55851AUKGTR |
2.5V/3V, 3.0GHz CML AnyGate ANY LOGIC WITH 50ohm or 100ohm OUTPUTS
|
MICREL[Micrel Semiconductor]
|
| MGFC47A4450 |
4.4~5.0GHz BAND 50W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
