| PART |
Description |
Maker |
| IB908F |
Intel Haswell-ULT User Manual
|
ETC
|
| RURD620S FN3640 RURD620 |
6A/ 200V Ultrafast Diodes
Mechanism, high speeed, 3-inch ELM w/low profile cutter, one tab 6 A, 200 V, SILICON, RECTIFIER DIODE, TO-251
6A 200V Ultrafast Diodes
From old datasheet system
6A, 200V Ultrafast Diodes
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| PHE844RR7220MR06L2 PHE844RR7150MR06L2 PHE844 PHE84 |
CAP 150PF 200V 200V X7R RAD.20 .20X.20 BULK M-MIL-PRF-39014
CAP 220PF 200V 200V X7R RAD.20 .20X.20 BULK M-MIL-PRF-39014
EMI suppressor, class X1, metallized polypropylene 电磁干扰抑制，类象X1，金属化聚丙
CAP 47PF 200V 200V X7R RAD.20 .20X.20 BULK M-MIL-PRF-39014 电磁干扰抑制，类象X1，金属化聚丙
|
List of Unclassifed Manufacturers
ETC[ETC]
Electronic Theatre Controls, Inc.
|
| IRFU220N IRFR220N IRFR220NTR IRFR220NTRL IRFR220NT |
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 5A I(D) | TO-252AA 晶体管| MOSFET的| N沟道| 200伏五（巴西）直| 5A条（丁）|52AA
Power MOSFET(Vdss=200V, Rds(on)max=600mohm, Id=5.0A)
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRFI9630G IRFI9630GPBF |
-200V Single P-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=-200V, Rds(on)=0.80ohm, Id=-4.3A)
Power MOSFET(Vdss=-200V/ Rds(on)=0.80ohm/ Id=-4.3A)
|
IRF[International Rectifier]
|
| FQD10N20C FQU10N20C FQD10N20CTM FQD10N20CTF FQU10N |
200V N-Channel Advance Q-FET C-Series
200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| FQP10N20C FQPF10N20C |
200V N-Channel Advance Q-FET C-Series
200V N-Channel MOSFET
|
Fairchild Semiconductor
|
| IRFW620B IRFI620B IRFI620BTUFP001 IRFW620BTMFP001 |
200V N-Channel B-FET / Substitute of IRFW620A
200V N-Channel MOSFET
200V N-Channel B-FET / Substitute of IRFI620A
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRFD210 |
200V Single N-Channel HEXFET Power MOSFET in a HEXDIP package
Power MOSFET(Vdss=200V, Rds(on)=1.5ohm, Id=0.60A)
|
International Rectifier
|
