| PART |
Description |
Maker |
| PLUS16L8-7N PLUS16R8-7N PLUS16R4-7N PLUS16R6-7N PL |
PAL devices OT PLD, 10 ns, PQCC20
|
NXP Semiconductors N.V.
|
| PAL16L2XX PAL12L6XX |
Military 20 Pin PAL Devices
|
Monolithic Memories
|
| PAL14L8 PAL20L10 PAL20X8 PAL20R4XX |
Military 24 Pin PAL Devices
|
Monolithic Memories
|
| LA7357 |
PAL/SECAM Discrimination Circuit for VHS VCRs(用于VHS VCR的PAL/SECAM的鉴别电 PAL / SECAM制式歧视录影带录像机电路（用于录影机的PAL / SECAM制式的鉴别电路）
|
Sanyo Electric Co., Ltd.
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| TDA8361 TDA8362 TDA8360 |
Integrated PAL and PAL/NTSC TV processors
|
PHILIPS[Philips Semiconductors]
|
| SAA7114E SAA7114H SAA7114 |
PAL/NTSC/SECAM video decoder with adaptive PAL/NTSC comb filter, VBI data slicer and high performance scaler
|
PHILIPS[Philips Semiconductors]
|
| HMP8117 |
Decoder, NTSC/PAL Video, (M) NTSC and (B, D, G, H, I, M, N, NC) PAL Operation
|
Intersil
|
| RKEF090 RKEF300 RKEF250 BBRF550 BBRF5501 RKEF500 R |
PolySwitch Resettable Devices Radial-leaded Devices
Overcurrent Protection Device
|
Tyco Electronics
http://
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| A1806UC4RP P0300SCMC |
SIDACtor devices
solid state crowbar devices
|
Teccor Electronics
|
|
