| PART |
Description |
Maker |
| 2SA2002 |
600mW Lead frame PNP transistor, maximum rating: -20V Vceo, -700mA Ic, 150 to 800 hFE. Complementary 2SC5485
FOR HIGH CURRENT APPLICATION SILICON PNP EPITAXIAL TYPE MICRO(FRAME TYPE)
|
Isahaya Electronics Corporation
|
| J412M2-26PL ER412DDM-18A/SG ER412DDM-26A/SG ER412Z |
RF RELAY, DPDT, MOMENTARY, 0.017A (COIL), 26.5VDC (COIL), 450mW (COIL), 1A (CONTACT), 28VDC (CONTACT), PANEL MOUNT
RF RELAY, DPDT, MOMENTARY, 0.022A (COIL), 18VDC (COIL), 450mW (COIL), 1A (CONTACT), 28VDC (CONTACT), PANEL MOUNT
RF RELAY, DPDT, MOMENTARY, 0.019A (COIL), 26.5VDC (COIL), 450mW (COIL), 1A (CONTACT), 28VDC (CONTACT), PANEL MOUNT
RF RELAY, DPDT, MOMENTARY, 0.09A (COIL), 5VDC (COIL), 450mW (COIL), 1A (CONTACT), 28VDC (CONTACT), PANEL MOUNT
RF RELAY, DPDT, MOMENTARY, 0.018A (COIL), 26.5VDC (COIL), 450mW (COIL), 1A (CONTACT), 28VDC (CONTACT), PANEL MOUNT
ESTABLISHED RELIABILITY TO-5 RELAYS
|
TELEDYNE TECHNOLOGIES INC
Teledyne Technologies I...
Willow Technologies Ltd
|
| AT71200M AT71200MCRER AT71200MCRERB AT71200MCRHR |
AT71200M Monochrome [Updated 2/03. 23 Pages] Full field CCD. 3500 x 2300 pixels. 4 x 25 MHz
Full field image sensor 3500 x 2300 pixels, 4 x 25 MHz
8M-pixel color image sensor. Full frame version standard image grade. Anti-reflective window.
8M-pixel color image sensor. Frame transfer version with two memories zones. Anti-reflective window.
8M-pixel color image sensor. Full frame version high image grade. Anti-reflective window.
|
Atmel
|
| UPD42280GU-30 |
IC,FIELD/FRAME/LINE MEMORY,CMOS,SOP,28PIN,PLASTIC
|
nec
|
| NP80N04PLG NP80N04PLG-E1B-AY NP80N04PLG-E2B-AY NP8 |
MOS FIELD EFFECT TRANSISTOR
80 A, 40 V, 0.0045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB LEAD FREE, MP-25ZP, TO-263, 3 PIN
SWITCHING N-CHANNEL POWER MOS FET
|
Renesas Electronics Corporation
|
| NP80N06NLG NP80N06NLG-S18-AY NP80N06PLG NP80N06PLG |
MOS FIELD EFFECT TRANSISTOR
80 A, 60 V, 0.0083 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB LEAD FREE, MP-25ZP, TO-263, 3 PIN
SWITCHING N-CHANNEL POWER MOS FET
|
Renesas Electronics Corporation
Yuasa Battery, Inc.
|
| MTB4N80E1_D ON2427 MTB4N80E1 MTB4N80E1-D |
TMOS E-FET High Energy Power FET D2PAK-SL Straight Lead N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 4.0 AMPERES 800 VOLTS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| B5B-435-TL |
B5B-435-TL is a AlGaInP LED mounted on a lead frame with a clear epoxy lens
|
Roithner LaserTechnik G...
|
| PS7901D-1A |
.NEPOC Series. (OCMOS FET) 4-PIN SMALL FLAT-LEAD, LOW OUTPUT CAPACITANCE (0.75 pF) 1-ch Optical Coupled MOS FET
|
Renesas Electronics Corporation
|
| B5B-433-B505 |
B5B-433-B505 is a InGaN LED mounted on a lead frame with a clear epoxy lens
|
Roithner LaserTechnik G...
|
|
