| PART |
Description |
Maker |
| M39P0R8070E2 M39P0R8070E2ZADE M39P0R8070E2ZADF |
256 or 512Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit Low Power SDRAM, 1.8V supply, Multi-Chip Package
|
Numonyx B.V
|
| M36P0R9060E0 M36P0R9060E0ZACE M36P0R9060E0ZACF |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 64 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package
|
Numonyx B.V
|
| 340-03B-4600 340-03B-4500 340-03B-4800 340-02A-280 |
Multi-level Series 多级系列
|
Electronic Theatre Controls, Inc.
|
| NB7VQ14MMNTXG |
Multi?Level Inputs Internal Termination
|
ON Semiconductor
|
| NB7L1008M |
Multi-Level Inputs w/ Internal Termination
|
ON Semiconductor
|
| XMEGAA09 |
Interrupts and Programmable Multi-level Interrupt Controller
|
ATMEL Corporation
|
| XMEGAD |
Interrupts and Programmable Multi-level Interrupt Controller
|
ATMEL
|
| NB6VQ572M NB6VQ572MMNG NB6VQ572MMNR4G |
Multi−Level Inputs w/ Internal Termination
|
ON Semiconductor
|
| NAND04GA3C2A NAND04GW3C2A |
(NAND04GA3C2A / NAND04GW3C2A) Multi-level NAND Flash Memory
|
ST Microelectronics
|
| M58LT128GST1ZA5E M58LT128GST1ZA5F M58LT128GS M58LT |
128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
|
STMICROELECTRONICS[STMicroelectronics]
|
| M30L0R8000B0 M30L0R8000B0ZAQ M30L0R8000B0ZAQE M30L |
256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
|
STMICROELECTRONICS[STMicroelectronics]
|
