| PART |
Description |
Maker |
| M39P0R9070E2 M39P0R9070E2ZADE M39P0R9070E2ZADF |
256 or 512Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit Low Power SDRAM, 1.8V supply, Multi-Chip Package
|
Numonyx B.V
|
| M39P0R9070E0ZADF M39P0R9070E0 M39P0R9070E0ZAD M39P |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit Low Power SDRAM, 1.8V Supply, Multi-Chip Package
|
STMICROELECTRONICS[STMicroelectronics]
|
| NB7VQ14MMNTXG |
Multi?Level Inputs Internal Termination
|
ON Semiconductor
|
| NAND04GA3C2A NAND04GW3C2A |
(NAND04GA3C2A / NAND04GW3C2A) Multi-level NAND Flash Memory
|
ST Microelectronics
|
| NAND04GX3C2A |
4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory
|
http://
|
| CY29FCT520ATPC |
<font color=red>[Old version datasheet]</font> Multi-Level Pipeline Register
|
TI store
|
| NB6L11M_07 NB6L11M NB6L11MMNG NB6L11MMNR2G NB6L11M |
2.5V / 3.3V 1:2 Differential CML Fanout Buffer Multi−Level Inputs w/ Internal Termination
|
ONSEMI[ON Semiconductor]
|
| M58LT128GST1ZA5E M58LT128GST1ZA5F M58LT128GS M58LT |
128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
|
STMICROELECTRONICS[STMicroelectronics]
|
| M58LR128GT85ZB5 M58LR128GB M58LR128GB85ZB5 M58LR12 |
128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
|
STMicroelectronics
|
| NB4L52MNR2G NB4L52MNG NB4L52_07 NB4L52 NB4L5207 |
2.5 V/3.3 V/5.0 V Differential Data/Clock D Flip-Flop with Reset Multi-Level Inputs to LVPECL Translator w/ Internal Termination
|
ONSEMI[ON Semiconductor]
|
