| PART |
Description |
Maker |
| 2SD2162 2SD2162-AZ |
8 A, 100 V, NPN, Si, POWER TRANSISTOR
NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
|
NEC
|
| 2N526 |
PNP germanium transistor for switching and ampli-fier applications in the audio-frequency range
|
New Jersey Semi-Conductor Products, Inc.
|
| 2SD2165 |
6 A, 100 V, NPN, Si, POWER TRANSISTOR
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
Silicon power transistor
|
NEC[NEC]
|
| 2SD2217 |
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
0.3 A, 300 V, NPN, Si, POWER TRANSISTOR
|
NEC[NEC]
|
| 2SC3357 2SC3357-T2 2SC3357RF 2SC3357-T1 |
For amplify high frequency and low noise.
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
|
NEC Corp.
|
| 2SD2425 2SD2425AB3 |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 5A I(C) | TO-243VAR
NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
Low freq. power amp., medium-speed switching transistor
|
NEC Corp.
NEC Electronics
NEC[NEC]
|
| KSD261 |
NPN (LOW FREQUENCY POWER AMPLIFIER)
|
SAMSUNG[Samsung semiconductor]
|
| 310-025107-012 |
Filtered Low Noise Ampli er
|
Spectrum Microwave, Inc.
|
| 310-024105-021 024105-021 |
Filtered Low Noise Ampli er
|
API Technologies Corp
Spectrum Microwave, Inc.
|
| 310-025105-012 |
Filtered Low Noise Ampli er
|
Spectrum Microwave, Inc.
|
| KSC1173 KSC1173OJ69Z KSC1173YTU |
NPN Epitaxial Silicon Transistor
Low Frequency Power Amplifier Power Regulator
3 A, 30 V, NPN, Si, POWER TRANSISTOR, TO-220 TO-220, 3 PIN
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
