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ISL614407 - High Voltage ORing MOSFET Controller

ISL614407_706508.PDF Datasheet


 Full text search : High Voltage ORing MOSFET Controller
 Product Description search : High Voltage ORing MOSFET Controller


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ISL614407 ISL6144IVZA ISL6144 ISL6144IR ISL6144IRZ High Voltage ORing MOSFET Controller
INTERSIL[Intersil Corporation]
SML80H12 SML100H11 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
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SML50W40 N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:500V,Id(cont):40A,Rds(on):0.12惟)(N娌??澧?己??楂???????OS?烘?搴??(Vdss:500V,Id(cont):40A,Rds(on):0.12惟))
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
SEME-LAB[Seme LAB]
SemeLAB
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24C16 ST25C16 ST25C16B1TR ST25C16B3TR ST25C16B5TR MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:-6.4A; Package/Case:PowerPAK 1212-8 16千位串行I2C总线的EEPROM与用户定义的块写保护
16 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection 16千位串行I2C总线的EEPROM与用户定义的块写保护
MOSFET, DUAL NN POWERPAKMOSFET, DUAL NN POWERPAK; Transistor type:MOSFET; Transistor polarity:Dual N; Voltage, Vds max:100V; Case style:PowerPak SO-8; Current, Id cont:1.8A; Current, Idm pulse:10A; Power, Pd:1.3W; Resistance, Rds
MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-3.6A; On-Resistance, Rds(on):0.065ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:MICRO FOOT; Leaded Process Compatible:No
MOSFET, DUAL, PP, POWERPAK; Transistor type:MOSFET; Current, Id cont:7A; Resistance, Rds on:0.02R; Voltage, Vgs Rds on measurement:10V; Case style:SO-8 PowerPak; Charge, gate p channel:49nC; Current, Idm pulse:30A; Depth, RoHS Compliant: Yes
(ST2xxx) 16 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection
16/8/4/2/1KbitSerialICBusEEPROM
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
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CONTACT 30A CRIMP/SOLDER 联系30A条卷
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LOCKING PIN POWERPACK 锁销强力
POWERPOLE HOUSING GREEN POWERPOLE房屋
3M Company
Anderson Power Products, Inc.
IRFE230 2N6798U N-Channel Power MOSFET(Vdss:200V,Id(cont):4.8A,Rds(on):0.46Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):4.8A,Rds(on):0.46Ω)) N沟道功率MOSFET(减振钢板基本:200伏,身份证(续).8A时,RDS(上):0.46Ω)(不适用马鞍山沟道功率场效应管(减振钢板基本00伏,身份证(续).8A时,RDS(对):0.46Ω))
N-Channel N沟道
NXP Semiconductors N.V.
TT electronics Semelab Limited
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International Rectifier
 
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