| PART |
Description |
Maker |
| CS5464 CS5464-IS CS5464-ISZ |
Three-channel, Single-phase Power/Energy IC
|
Cirrus Logic
|
| IRF9230 |
Avalanche-Energy-Rated P-Channel Power MOSFETs
|
New Jersey Semi-Conductor Products, Inc.
|
| IRF150R IRF151R IRF152R IRF153R |
AVALANCHE ENERGY RATED N-CHANNEL POWER MOSFETS
|
List of Unclassifed Manufacturers
ETC
|
| IRF5M4905 IRF5M4B905 |
Avalanche Energy Ratings
THRU-HOLE (TO-254AA) 55V, P-CHANNEL
POWER MOSFET P-CHANNEL(Vdss=-55V, Rds(on)=0.03ohm, Id=-35A*)
|
International Rectifier
|
| PHP10N60E |
PowerMOS transistors Avalanche energy rated 9.6 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| JE93I9HTR5 JE9 JE9112HR1 JE9112HR2 JE9112HR3 JE911 |
Digital Media System-on-Chip (DMSoC) 338-NFBGA 大功率磁保持继电
2.0mV Quad Ultra Micropower Rail-to-Rail CMOS Operational Amplifier, 24L SOIC 大功率磁保持继电
HIGH POWER LATCHING RELAY 大功率磁保持继电
Energy Harvesting Module w/ connector, 1.8V to 3.6V, 4.6mJ, 68msec@25mA
Energy Harvesting Module w/ connector, 3.1V to 5.2V, 55mJ, 88msec@150mA
Energy Harvesting Module w/ connector, 3.1V to 5.2V, 8.3mJ, 80msec@25mA
Energy Harvesting Module w/ connector, 1.8V to 3.6V, 30mJ, 75msec@150mA
SOIC socket added to Adapter Module
|
Hongfa Relay
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Xiamen Hongfa Electroacoustic Co., Ltd.
厦门宏发电声股份有限公司
HONGFA[Hongfa Technology]
|
| IRF5NJ6215 |
Avalanche Energy Ratings
POWER MOSFET P-CHANNEL(Vdss=-150V, Rds(on)=0.29ohm, Id=-11A)
-150V Single P-Channel Hi-Rel MOSFET in a SMD-0.5 package
|
International Rectifier
|
| MTB8N50E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MTB10N40E MTB10N40E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 10 AMPERES
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTB3N120E_D ON2421 MTB3N120E MTB3N120E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 3.0 AMPERES 1200 VOLTS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTB2P50E_D ON2408 MTB2P50E MTB2P50E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount P-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 2.0 AMPERES 500 VOLTS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
