| PART |
Description |
Maker |
| UPD44324184F5-E33-EQ2 UPD44324084F5-E33-EQ2 UPD443 |
36M-BIT DDRII SRAM 4-WORD BURST OPERAT 36M条位SRAM条DDRII词爆生产营运
|
NEC Corp.
NEC, Corp.
|
| UPD44164365F5-E60-EQ1 UPD44164085 UPD44164085F5-E4 |
18M-BIT DDRII SRAM SEPARATE I/O 2-WORD BURST OPERATION
|
NEC[NEC]
|
| UPD44325084 UPD44325084F5-E50-EQ2 UPD44325094F5-E5 |
CABLE ASSEMBLY; LEAD-FREE SOLDER; SMA MALE TO SMA MALE; 50 OHM, RG142B/U COAX, DOUBLE SHIELDED
36M-BIT QDRII SRAM 4-WORD BURST OPERATION 36M条位推出QDRII SRAM4个字爆发运作
36M-BIT QDRII SRAM 4-WORD BURST OPERATION 36M条位推出QDRII SRAM个字爆发运作
4M X 8 QDR SRAM, 0.45 ns, PBGA165 13 X 15 MM, PLASTIC, FBGA-165
|
NEC Corp.
NEC, Corp.
|
| K7I161882B-FC16 K7I161882B-FC20 K7I161882B-FC25 K7 |
512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM 512Kx36位，1Mx18位首席信息官b2DDRII的SRAM
GT 35C 35#16 PIN PLUG RTANG
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| MC74HC367A MC74HC367AD MC74HC367ADT MC74HC367AN ON |
Telecomm/Datacomm HC/UH SERIES, 6-BIT DRIVER, TRUE OUTPUT, PDSO16
From old datasheet system
Hex 3-State Noninverting Buffer with Separate 2-Bit and 4-Bit Sections
Hex 3-State NonInverting Buffer with Separate 2-Bit and 4-Bit Section High-Performance Silicon-Gate CMOS
|
Motorola Mobility Holdings, Inc.
ONSEMI[ON Semiconductor]
|
| K7I643682M07 K7I641882M |
2Mx36 & 4Mx18 DDRII CIO b2 SRAM
|
Samsung semiconductor
|
| K7K1618U2C K7K1636U2C |
512Kx36 & 1Mx18 DDRII CIO b2 SRAM
|
Samsung semiconductor
|
| K7K1636T2C K7K1618T2C |
512Kx36 & 1Mx18 DDRII CIO b2 SRAM
|
Samsung semiconductor
|
| K7K3236T2C K7K3218T2C |
1Mx36 & 2Mx18 DDRII CIO b2 SRAM
|
Samsung semiconductor
|
| K7K3236U2C K7K3218U2C |
1Mx36 & 2Mx18 DDRII CIO b2 SRAM
|
Samsung semiconductor
|
