| PART |
Description |
Maker |
| R7449 |
PHOTOMULTlPLlER TUBE PHOTOMULTlPLlER
|
Hamamatsu Photonics K.K.
|
| R5496 |
PHOTOMULTlPLlER TUBE
|
HAMAMATSU[Hamamatsu Corporation]
|
| R3896 |
PHOTOMULTlPLlER TUBE
|
HAMAMATSU[Hamamatsu Corporation]
|
| R5108 |
PHOTOMULTlPLlER TUBE
|
HAMAMATSU[Hamamatsu Corporation]
|
| R464 R585 R465 |
Spectral responce:160-650nm; between anode and cathode:1500Vdc; 0.01mA; photomultiplier tube
PHOTOMULTlPLlER TUBES
|
HAMAMATSU[Hamamatsu Corporation]
Hamamatsu Photonics
|
| R7447 R7447P |
PHOTOMULTlPLlER TUBES PHOTOMULTlPLlER
|
Hamamatsu Photonics K.K.
|
| R2693P R2693 |
PHOTOMULTlPLlER TUBES
|
Hamamatsu Photonics
HAMAMATSU[Hamamatsu Corporation]
|
| HM2101B |
High power MOS tube, IGBT tube gate driver chip
|
Shenzhen Huazhimei Semi...
|
| EG3013 |
Power MOS tube / IGBT gate driver chip tube
|
EGmicro
|
| R636-10 R758-10 R636-10-15 |
UV to Near IR (R636?0:185 to 930 nm, R758?0:160 to 930nm) Spectral Response 28mm(1-1/8 Inch) Diameter, GaAs(Cs) Photocathode, 9-stage,Side-On Type
PHOTOMULTlPLlER TUBES
|
HAMAMATSU[Hamamatsu Corporation]
Hamamatsu Photonics
|
| 2SA138407 2SA1384 |
High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications
|
Toshiba Semiconductor
|
| 2SA1384 |
Transistor Silicon PNP Triple Diffused Type (PCT process) HIGH Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications
|
TOSHIBA
|
