| PART |
Description |
Maker |
| X28HC256P-12 X28HC256P-15 X28HC256J-90 X28HC256S-1 |
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 150 ns, PDSO28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 120 ns, CPGA28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, CQCC32
SWITCH SLIDE 2MM HORIZONTAL SMD 32K X 8 EEPROM 5V, 90 ns, CDIP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, CDIP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, CDIP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, PDIP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, PDSO28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, PDSO28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, PDIP28
RACK DESK SOLID BLACK 1.75X19X8,1 32K X 8 EEPROM 5V, 70 ns, CPGA28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, PQCC32
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, CPGA28
Continuity Tester RoHS Compliant: NA 32K X 8 EEPROM 5V, 90 ns, PQCC32
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, PQCC32
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, CDFP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, CQCC32
Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 1000uF; Voltage: 50V; Case Size: 12.5x25 mm; Packaging: Bulk
|
Intersil, Corp.
Intersil Corporation
|
| 28C256ASC-1 28C256ASC-2 28C256ASC-3 28C256ASC-4 28 |
High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
|
Turbo IC
|
| ATTINY13 |
1-Kbyte In-System programmable Flash Program Memory, 64-Byte SRAM, 64-Byte EEPROM, 32-Byte Register File, 4-channel 10-bit A/D, Up to 16 MIPS throughput at 16 MHz, 5 Volts. 1.8 - 5.5 Volt Operation.
|
Atmel
|
| X28HC64SIZ-12 X28HC64SIZ-70 X28HC64J-12 X28HC64JIZ |
64K, 8K x 8 Bit; 5 Volt, Byte Alterable EEPROM; Temperature Range: -40°C to 85°C; Package: 32-PLCC T&R 8K X 8 EEPROM 5V, 90 ns, PQCC32
64K, 8K x 8 Bit; 5 Volt, Byte Alterable EEPROM; Temperature Range: -40°C to 85°C; Package: 28-SOIC T&R 8K X 8 EEPROM 5V, 120 ns, PDSO28
64K, 8K x 8 Bit; 5 Volt, Byte Alterable EEPROM; Temperature Range: 0°C to 70°C; Package: 28-PDIP 8K X 8 EEPROM 5V, 90 ns, PDIP28
64K, 8K x 8 Bit; 5 Volt, Byte Alterable EEPROM; Temperature Range: -40°C to 85°C; Package: 28-SOIC 8K X 8 EEPROM 5V, 70 ns, PDSO28
|
Intersil Corporation
http://
Intersil, Corp.
|
| AT49F1024 AT49F1024-50VC |
x16 Flash EEPROM
From old datasheet system
1-megabit (64K x 16) 5-volt Only Flash Memory
1M bit, 64K x 16, 5-Volt Read and 5-Volt Write Flash
|
Atmel Corp
|
| IS23SC4418 IS23SC4428 |
1024 x 8 Bits of EEPROM With Programmable Write Protection For Each Byte.(1024 x 8位，每个字节带可编程写保护的EEPROM) 1024 × 8位的EEPROM，具有可编程写保护每个字节。（1024 × 8位，每个字节带可编程写保护的EEPROM中）
1024 x 8 Bits of EEPROM With Programmable Write Protection For Each Byte And Two Bytes of Programmable Security Code(1024 x 8位，每个字节带可编程写保护，2字节可编程安全密码的EEPROM) 1024 × 8位的EEPROM，具有可编程写保护对于每一个字节，两个字节可编程保障法024 × 8位，每个字节带可编程写保护，2字节可编程安全密码的EEPROM中）
|
GTM, Corp.
Integrated Silicon Solution, Inc.
|
| AT90SC4816RS |
AT90SC4816RS Summary [Updated 06/03. 2 Pages] Summary of the AT90SC4816RS giving the key features. a brief description and a block diagram.
Low-power, high-performance, 8-/16-bit secure microcontroller with 48K Byte ROM and 16K Byte EEPROM. Security Features: MMU, MED, OTP (One Time Programmable) EEPROM area, RNG (random Number Generator), "out of bounds" detectors, side chann
|
Atmel
|
| ISPLSI2128VE ISPLSI2128VE-100LB100 ISPLSI2128VE-10 |
3.3V In-System Programmable SuperFAST?High Density PLD
CRYSTAL 32.768KHZ 12.5PF SMD
3.3V In-System Programmable SuperFAST?/a> High Density PLD
3.3V In-System Programmable SuperFAST⑩ High Density PLD
3.3V In-System Programmable SuperFAST High Density PLD
CRYSTAL 12.0 MHZ 20PF SMD
3.3V In-System Programmable SuperFASTHigh Density PLD EE PLD, 7.5 ns, PQFP176
3.3V In-System Programmable SuperFASTHigh Density PLD EE PLD, 7.5 ns, PBGA208
3.3V In-System Programmable SuperFASTHigh Density PLD EE PLD, 6 ns, PBGA208
3.3V In-System Programmable SuperFASTHigh Density PLD EE PLD, 10 ns, PBGA100
3.3V In-System Programmable SuperFASTHigh Density PLD EE PLD, 7.5 ns, PBGA100
3.3V In-System Programmable SuperFASTHigh Density PLD EE PLD, 7.5 ns, PQFP160
3.3V In-System Programmable SuperFASTHigh Density PLD EE PLD, 7.5 ns, PQFP100
3.3V In-System Programmable SuperFASTHigh Density PLD 3.3在系统可编程超快⑩高密度可编程逻辑器件
3.3VIn-SystemProgrammableSuperFASTHighDensityPLD
3.3V In-System Programmable SuperFAST?/a> High Density PLD
|
LATTICE[Lattice Semiconductor]
Lattice Semiconductor Corporation
Lattice Semiconductor, Corp.
|
| R1EX25032ASA00A-15 |
Serial Peripheral Interface 32k EEPROM (4-kword × 8-bit) 64k EEPROM (8-kword × 8-bit) Electrically Erasable and Programmable Read Only Memory
|
Renesas Electronics Corporation
|
| HN58X25128TIE HN58X25128FPIE |
Serial Peripheral Interface 128k EEPROM (16-kword × 8-bit) 256k EEPROM (32-kword × 8-bit) Electrically Erasable and Programmable Read Only Memory
|
Renesas Electronics Corporation
|
| HN58X25256FPIE HN58X25128FPIE HN58X25128I HN58X251 |
Serial Peripheral Interface 128k EEPROM (16-kword 】 8-bit) 256k EEPROM (32-kword 】 8-bit) Electrically Erasable and Programmable Read Only Memory
|
RENESAS[Renesas Electronics Corporation]
|
|
