| PART |
Description |
Maker |
| CD4049UBT 5962R9663601TXC 5962R9663601TEC CD4049UB |
INDUCTOR, AXIAL, 15UH; Inductor type:High Frequency / RF; Inductance:15uH; Tolerance, inductance: /-10%; Resistance:0.6R; Current, DC max:610mA; Frequency, resonant:20MHz; Case style:Axial; Q factor:60; Material, core:Ferrite; RoHS Compliant: Yes
CMOS Hex Buffer/Converter
|
Intersil Corporation
|
| FD1000FV-90 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| PM105-390M-RC |
Power Inductor; Series:PM105; Inductance:39uH; Inductance Tolerance: /- 20 %; Self Resonant Frequency:12MHz; Terminal Type:PCB Surface Mount; Core Material:Ferrite; Current Rating:1.37A; DC Resistance Max:0.14ohm
|
BOURNS INC
|
| 15GN01CA12 ENA1098A |
VHF to UHF Band High-Frequency Switching, High-Frequency General-Purpose Amplifier Applications
|
Sanyo Semicon Device
|
| 15GN01FA |
NPN Epitaxial Planar Silicon Transistor VHF to UHF Band High-Frequency Switching, High-Frequency General-Purpose Amplifier Applications
|
Sanyo Semicon Device
|
| MC08ED150J-F MC08CA020D-F MC08CA050D-F MC08CA060D- |
Multilayer RF Capacitors High-Frequency, High-Power, High-Voltage Chips with Nonmagnetic Option
|
Cornell Dubilier Electronics, Inc.
http://
Cornell Dubilier Electronic...
Cornell Dubilier Electr...
|
| FD1000FH-56 |
1000 A, 2800 V, SILICON, RECTIFIER DIODE
HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
HIGH POWER/ HIGH FREQUENCY/ PRESS PACK TYPE
|
Mitsubishi Electric Semiconductor
|
| 2SK711 |
Field Effect Transistor Silicon N Channel Junction Type High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications
|
TOSHIBA
|
