| PART |
Description |
Maker |
| BB641 Q62702-B792 SIEMENSAG-Q62702-B792 |
Silicon Variable Capacitance Diode (For VHF Hyperband TV/TR tuners High capacitance ratio Low series resistance)
From old datasheet system
|
SIEMENS AG
Infineon
Siemens Group
SIEMENS[Siemens Semiconductor Group]
|
| K75-29A K75-48M K75-82 K75-15 K75-80 K75-54 K78-10 |
Aluminum Snap-In Capacitor; Capacitance: 10000uF; Voltage: 35V; Case Size: 30x30 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 22000uF; Voltage: 35V; Case Size: 35x45 mm; Packaging: Bulk
FILM AND PAPER-FILM CAPACITORS
Aluminum Snap-In Capacitor; Capacitance: 10000uF; Voltage: 35V; Case Size: 25x40 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 4700uF; Voltage: 35V; Case Size: 25x25 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 5600uF; Voltage: 35V; Case Size: 22x35 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 680uF; Voltage: 450V; Case Size: 35x50 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 8200uF; Voltage: 16V; Case Size: 22x25 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 390uF; Voltage: 450V; Case Size: 30x40 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 12000uF; Voltage: 35V; Case Size: 25x45 mm; Packaging: Bulk
CAPACITOR, 6800UF 35V CAPACITOR, 6800UF 35V; CAPACITANCE:6800UF; VOLTAGE RATING, DC:35V; CAPACITOR DIELECTRIC TYPE:ALUMINIUM ELECTROLYTIC; SERIES:LLS; TEMP, OP. MAX:85(DEGREE C); TEMP, OP. MIN:-40(DEGREE C); TOLERANCE, :20%; RoHS Compliant: Yes
Aluminum Snap-In Capacitor; Capacitance: 8200uF; Voltage: 35V; Case Size: 22x45 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 270uF; Voltage: 450V; Case Size: 35x25 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 22000uF; Voltage: 16V; Case Size: 25x40 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 22000uF; Voltage: 16V; Case Size: 30x30 mm; Packaging: Bulk
|
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
http://
|
| Z8L18008FEC Z8L18008VEC Z8L18008PEC Z8L18010FSC Z8 |
Microprocessor Unit
Z8018x Family MPU
Niobium Oxide Capacitor; Capacitor Type:Solid; Voltage Rating:4VDC; Capacitor Dielectric Material:Niobium Oxide; Capacitance:10uF; Capacitance Tolerance: /- 20%; ESR:2.2ohm; Leaded Process Compatible:Yes; Operating Temp. Max:105 C RoHS Compliant: Yes
CONN RING INSUL 26-24 AWG #8
CONN RING INSUL 26-24 AWG #6
CONN RING INSUL 26-24 AWG #2 8-BIT, MICROPROCESSOR, PDIP64
ENHANCED Z180 MICROPROCESSOR
Niobium Oxide Capacitor; Capacitor Type:Solid; Voltage Rating:6.3VDC; Capacitor Dielectric Material:Niobium Oxide; Capacitance:6.8uF; Capacitance
dielectric type:Niobium Oxide; Case style:P; Depth, external:1.5mm; Length / Height, RoHS Compliant: Yes
Niobium Oxide Capacitor; Capacitor Type:Solid; Voltage Rating:2.5VDC; Capacitor Dielectric Material:Niobium Oxide; Capacitance:15uF; Capacitance
Niobium Oxide Capacitor; Capacitor Type:Solid; Voltage Rating:6.3VDC; Capacitor Dielectric Material:Niobium Oxide; Capacitance:4.7uF; Capacitance
|
ZILOG INC
Zilog Inc.
Zilog.
ZiLOG, Inc.
|
| MMVL105GT1 ON2289 |
VOLTAGE VARIABLE CAPACITANCE DIODE 2.15 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE
30 VOLT VOLTAGE VARIABLE CAPACITANCE DIODE
From old datasheet system
|
Leshan Radio Company, Ltd.
ONSEMI[ON Semiconductor]
|
| GS-R4840NV |
; Capacitance:1.2pF; Capacitance Tolerance: /- 0.1 pF; Working Voltage, DC:150V; Package/Case:0605; Series:SQ; Dielectric Material:Ceramic; Leaded Process Compatible:Yes; Mounting Type:PCB Surface Mount 36糯负开关稳压器
36 W NEGATIVE SWITCHING REGULATOR
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| 1SV229 |
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
Variable Capacitance Diode VCO for UHF Band Radio
|
Toshiba Semiconductor
|
| SGH30N60RUF SGH30N60RUFTU |
Discrete, Short Circuit Rated IGBT
Ceramic Multilayer Capacitor; Capacitance:2200pF; Capacitance Tolerance: 50, -20 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Package/Case:0805; Series:W2F; Features:Feedthru; Leaded Process Compatible:Yes
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| SFH409-2 Q62702-P1001 Q62702-P1002 Q62702-P860 SFH |
From old datasheet system
GaAs Infrared Emitter
Mica Film Capacitor; Capacitance:47pF; Capacitance Tolerance: /- 5 %; Working Voltage, DC:300V
CAP MICA 43PF 300V SMD 砷化镓红外发射器
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| BB200 BB200_1 |
Low-voltage variable capacitance double diode 70 pF, 18 V, SILICON, VARIABLE CAPACITANCE DIODE, TO-236AB
From old datasheet system
|
NXP Semiconductors N.V.
Philipss
Philips Semiconductors
|
| GMV2114-GM1 GMV2154-GM1 GMV1981-GM1 GMV5007-GM1 GM |
Surface Mount Varactor Diodes
C BAND, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
C BAND, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
C BAND, 0.25 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE
|
Microsemi Corporation
MICROSEMI CORP-LOWELL
|
| LSG3351 Q62703-Q2297 LSG_3351 LSG3351-HO |
3 mm (T1) MULTILED / Diffused
Fail-Safe Floating Electrode MLCC / FE-CAP / X7R Dielectric; Capacitance [nom]: 0.1uF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance
3 mm (T1) MULTILED, Diffused
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| Q62702-B403 BB620 |
From old datasheet system
Silicon Variable Capacitance Diode (For Hyperband TV/VTR tuners / Bd I)
Silicon Variable Capacitance Diode (For Hyperband TV/VTR tuners, Bd I) 硅变容二极管（对于Hyperband电视/录像机调谐器，屋宇署一
Silicon Variable Capacitance Diode (For Hyperband TV/VTR tuners, Bd I) 30 V, SILICON, VARIABLE CAPACITANCE DIODE
|
SIEMENS[Siemens Semiconductor Group]
Siemens Group
SIEMENS AG
|
