| PART |
Description |
Maker |
| NE56987 NE56953E NE56954 NE56900 |
NPN MEDIUM POWER MICROWAVE TRANSISTOR
|
NEC[NEC]
|
| AU-1049-70-1179 AU-1049-70-N-1179 AU-1372-140-N AU |
50 MHz - 90 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
100 MHz - 180 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
30 MHz - 500 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
50 MHz - 1000 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
|
MITEQ INC
|
| CSD882P CSD882R CSD882 CSD882E CSD882Q |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB772P
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB772R
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB772Q
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSB772E
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSB772
Audio Frequency Power Amplifier and Low Speed Switching Applications
|
CDIL[Continental Device India Limited]
|
| MRF10150 |
MICROWAVE POWER TRANSISTOR NPN SILICON
MICROWAVE POWER TRANSISTORS
|
Tyco Electronics
|
| PN5325 SPN5325 |
10 MHz - 100 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
10 MHz - 100 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
|
|
| B20V140B |
Medium power silicon microwave transistor
|
BOPOLARICS
|
| ANP851M1-23 |
RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
|
Sumida, Corp.
|
| TGA1073C-EPU |
RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
|
TRIQUINT SEMICONDUCTOR INC
|
| ZQL-900MLNW |
800 MHz - 900 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER CASE CW686
800 MHz - 900 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER ROHS COMPLIANT, CASE CW686
|
Mini-Circuits
|
| SD1018 |
RF & MICROWAVE TRANSISTORS VHF BAND, Si, NPN, RF POWER TRANSISTOR
RF & MICROWAVE TRANSISTORS
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| C2688BPL CSC2688 CSC2688BPL CSC2688G CSC2688O CSC2 |
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 200.000A Ic, 40 - 250 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 40 - 250 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 160 - 250 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 60 - 120 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 40 - 80 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 100 - 200 hFE.
|
Continental Device India Limited
|
