| PART |
Description |
Maker |
| FTD8004 |
Nch Nch
N-Channel Silicon MOSFET General-Purpose Switching Device
|
Sanyo Semicon Device
|
| CPH6613 |
Nch Nch
N-Channel Silicon MOSFET General-Purpose Switching Device
|
Sanyo Semicon Device
|
| CPH5614 |
Nch Nch
N-Channel Silicon MOSFET General-Purpose Switching Device
|
Sanyo Semicon Device
|
| ES6U3 |
4V Drive Nch SBD MOSFET
|
Rohm
|
| ES6U3T2CR |
4V Drive Nch SBD MOSFET
|
ROHM
|
| US5U1 |
2.5V Drive Nch SBD MOS FET
|
ROHM[Rohm]
|
| SSM5H11TU |
Silicon N Channel MOS Type (U-MOS3)/Silicon Epitaxial Schottky Barrier Diode
Multi-chip discrete device (N-ch SBD)
|
Toshiba Semiconductor
|
| VEC2815 |
MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode
|
Sanyo Semicon Device
|
| CPH5801 |
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode DC/DC Converter Applications
|
SANYO[Sanyo Semicon Device]
|
| SCH2819 |
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device
|
Sanyo Semicon Device
|
| VEC2818 |
MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device
|
Sanyo Semicon Device
|
