| PART |
Description |
Maker |
| SI4392DY-T1-E3 SI4392DY SI4392DY-E3 SI4392DY-T1 |
N-Ch. Reduced Qg, Fast Switching WFET; Extr.Low Switching Loss N沟道，低Qg，快速开WFET，超低开关损
N-Channel Reduced Qg, Fast Switching WFET
N-Channel Reduced Qg/ Fast Switching WFET
|
Vishay Intertechnology, Inc.
VISAY[Vishay Siliconix]
|
| UTCHE8550 HE8550-TO-92 |
PNP EPITAXIAL SILIC ON TRANSISTOR
|
友顺科技股份有限公司
UTC[Unisonic Technologies]
|
| STGW30NC60WD STGW30NC60WD07 GW30NC60WD |
STGW30NC60WD
N-channel 30A - 600V - TO-247 Ultra fast switching PowerMESH IGBT
N-channel 30A - 600V - TO-247 Ultra fast switching PowerMESH?/a> IGBT
N-channel 30A - 600V - TO-247 Ultra fast switching PowerMESH垄芒 IGBT
|
STMicroelectronics
|
| GT15J321 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications
|
TOSHIBA
|
| SI7452DP |
N-Channel 60-V (D-S) Fast Switching MOSFET
|
Vishay Siliconix
VISAY
|
| UTM6006G-K08-5060-R UTM6006G-S08-R |
N-CHANNEL FAST SWITCHING MOSFET
|
Unisonic Technologies
|
| SI7806BDN-T1-E3 |
N-Channel 30-V (D-S) Fast Switching MOSFET
|
Vishay Intertechnology,Inc.
|
| MC4433 |
P-Channel 30-V (D-S) MOSFET Fast switching speed
|
ShenZhen FreesCale Electronics. Co., Ltd
|
| SI4384DY |
N-Channel Reduced Qg, Fast Switching MOSFET
|
Vishay Siliconix
|
