| PART |
Description |
Maker |
| WMS512K8BV-20E WMS512K8BV-17E WMS512K8BV-17DEMEA W |
20ns; low voltage operation: 3.3V -10% power supply; 512K x 8 monolithic SRAM
17ns; low voltage operation: 3.3V -10% power supply; 512K x 8 monolithic SRAM
15ns; low voltage operation: 3.3V -10% power supply; 512K x 8 monolithic SRAM
512K X 8 STANDARD SRAM, 17 ns, CDSO32
512Kx8 Monolithic SRAM(512Kx8单片静态RAM（BiCMOS,存取时间17ns
512Kx8 Monolithic SRAM(512Kx8单片静态RAM（BiCMOS,存取时间20ns
|
White Electronic Designs Corporation
|
| WMS512K8LV-100CME WMS512K8LV-85CME WMS512K8LV-85CM |
512Kx8 MONOLITHIC SRAM
|
WEDC[White Electronic Designs Corporation]
|
| WMS512K8LV-70CCE WMS512K8LV-85DEIE WMS512K8LV-85DE |
512Kx8 MONOLITHIC SRAM 512Kx8整装静态存储器
|
PMC-Sierra, Inc.
Pyramid Semiconductor, Corp.
|
| WMS512K8L-25FQA WMS512K8-25FQA WMS512K8L-45DEC WMS |
512Kx8 MONOLITHIC SRAM, SMD 5962-95613
|
White Electronic Designs Co...
White Electronic Design...
|
| WMS512K8BV-17CCE WMS512K8BV-17CIE WMS512K8BV-17FCE |
SRAM|512KX8|BICMOS-TTL|DIP|32PIN|CERAMIC
SRAM|512KX8|BICMOS-TTL|FP|32PIN|CERAMIC
SRAM|512KX8|BICMOS-TTL|SOJ|32PIN|CERAMIC 静态存储器| 512KX8 |的BiCMOS - TTL电| SOJ | 32脚|陶瓷
SRAM|512KX8|BICMOS-TTL|FP|36PIN|CERAMIC 静态存储器| 512KX8 |的BiCMOS - TTL电|计划生育| 36PIN |陶瓷
SRAM|512KX8|BICMOS-TTL|SOJ|36PIN|CERAMIC 静态存储器| 512KX8 |的BiCMOS - TTL电| SOJ | 36PIN |陶瓷
|
Electronic Theatre Controls, Inc.
AMIC Technology, Corp.
|
| 5962-9561307HZX WMS512K8L-15CLC WMS512K8L-15CLCA W |
512Kx8 MONOLITHIC SRAM
BOX 4.38X3.25X0.91BLACK BULK
STD BLK BOX (3.25X4.38X0.9)
STD-I BLK BOX (3.25X4.38X0.9)
BOX END PANEL INFRA-RED A27 SERI 512Kx8整装静态存储器
BOX 4.38X3.25X0.91 WALL MT BLK 512Kx8整装静态存储器
BOX 3.3X5.6X1.5 STD EMI BLACK 512Kx8整装静态存储器
BOX 4.38X3.25X1.91 WALL MT BLK 512Kx8整装静态存储器
BOX 4.38X3.25X1.91 GRY 512Kx8整装静态存储器
BOX 4.38X3.25X1.91 WALL MT GRY 512Kx8整装静态存储器
BOX 6.88X4.88X.9 BLK 512Kx8整装静态存储器
BOX STD ALM (4.88X6.88X.9) 512Kx8整装静态存储器
BOX 5.63X3.25X1.51 WALL MT GRY 512Kx8整装静态存储器
BOX 5.63X3.25X1.51 WALL MT BLK 512Kx8整装静态存储器
STD ALMOND BOX (3.25X4.38X0.9) 512Kx8整装静态存储器
BOX 5.63 X 3.26 X .91 GRY 512Kx8整装静态存储器
512Kx8 MONOLITHIC SRAM 512Kx8整装静态存储器
END PANEL W/DB25 FOR A-31 BLK 512Kx8整装静态存储器
BOX 4.38X3.25X2.01 BLK 512Kx8整装静态存储器
BOX 4.38X3.25X2.01 GRY 512Kx8整装静态存储器
DIODE, MICRO-MELFDIODE, MICRO-MELF; Voltage, Vrrm:100V; Current, If av:0.15A; Case style:MicroMELF; Current, If max:0.2A; Current, Ifrm:0.45mA; Current, Ifs max:2A; Diameter, External:1.35mm; Diode type:Small signal; Length / Height,
SENSOR HI-IMP 30PSIA DIP PKG
20ns; 512K x 8 monilithic SRAM, SMD 5962-95613
35ns; 512K x 8 monilithic SRAM, SMD 5962-95613
15ns; 512K x 8 monilithic SRAM, SMD 5962-95613
|
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
List of Unclassifed Man...
White Electronic Designs
|
| CYM1464 CYM1464PD-22C CYM1464PD-30C CYM1464PD-45C |
512Kx8 Static RAM Module 512K X 8 MULTI DEVICE SRAM MODULE, 20 ns, DMA32
512Kx8 Static RAM Module 512K X 8 MULTI DEVICE SRAM MODULE, 25 ns, DMA32
512Kx8 Static RAM Module 512K X 8 MULTI DEVICE SRAM MODULE, 55 ns, DMA32
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
|
| K6R4008C1C-C K6R4008C1C-C10 K6R4008C1C-C12 K6R4008 |
CMOS SRAM
512Kx8 Bit High Speed Static RAM(5V Operating). Operated at Extended and Industrial Temperature Ranges.
|
Samsung semiconductor
|
| WS512K8L-25CMA |
512Kx8 SRAM MODULE, SMD 5962-92078 512Kx8的SRAM模块，贴962-92078
|
Electronic Theatre Controls, Inc.
|
| ACT-PS512K8W-012L2I ACT-PS512K8Y-017L2T ACT-PS512K |
High speed 4 Megabit plastic monolithic SRAM. Options burn-in. Speed 12ns.
High speed 4 Megabit plastic monolithic SRAM. Options temp cycle & burn-in. Speed 17ns.
High speed 4 Megabit plastic monolithic SRAM. Options none. Speed 10ns.
High speed 4 Megabit plastic monolithic SRAM. Options temp cycle. Speed 15ns.
High speed 4 Megabit plastic monolithic SRAM. Options temp cycle & burn-in. Speed 25ns.
High speed 4 Megabit plastic monolithic SRAM. Options temp cycle & burn-in. Speed 20ns.
|
Aeroflex Circuit Technology
|
| K5A3X40YTC K5A3240YBC-T855 K5A3240YTC-T855 K5A3240 |
Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
