| PART |
Description |
Maker |
| EDI88512CA_LPA-B32 EDI88512CA_LPA-C EDI88512CA_LPA |
20ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600
17ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600
35ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600
45ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600
25ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600
15ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600
512Kx8 Monolithic SRAM SMD 5962-95600
512Kx8 Monolithic SRAM, SMD 5962-95600
SRAM
60MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-MSOP T&R
12MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-MSOP T&R
NTC Thermistor; Series:PANR; Thermistor Type:NTC; Resistance:1kohm; Beta:3500; Package/Case:Radial; Leaded Process Compatible:Yes; Mounting Type:Through Hole; R/T Curve:M; Terminal Type:Radial Leaded RoHS Compliant: Yes
12MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-MSOP T&R 静态存储器
60MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-MSOP T&R 静态存储器
12MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-MSOP 静态存储器
55ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600
|
White Electronic Designs
ETC[ETC]
Electronic Theatre Controls, Inc.
|
| EDI88130LPSNI EDI88130CS EDI88130CSLM EDI88130CSL3 |
25ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598
45ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598
17ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598
128Kx8 Monolithic SRAM, SMD 5962-89598 128Kx8单片的SRAM，贴962-89598
128Kx8 Monolithic SRAM/ SMD 5962-89598
15ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598
20ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598
35ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598
55ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598
|
White Electronic Designs
ETC
Electronic Theatre Controls, Inc.
|
| EM6112K800VTA-55F EM6112K1600VTA-55F EM6112K800WTA |
512Kx8 LP SRAM
|
http://
Eorex Corporation
|
| WMS256K16L-17DLMA WMS256K16-20DLC WMS256K16-20DLCA |
256Kx16 MONOLITHIC SRAM, SMD 5962-96902
|
WEDC[White Electronic Designs Corporation]
|
| EDI88130CXCC EDI88130CXCI EDI88130CXCM EDI88130CXC |
128Kx8 MONOLITHIC SRAM, SMD 5962-89598
|
http://
|
| EDI88130LPSXCI EDI88130CSXFB EDI88130CSXCC EDI8813 |
128Kx8 Monolithic SRAM, SMD 5962-89598
|
WEDC[White Electronic Designs Corporation]
|
| KM23V4000D |
4M-Bit (512Kx8) CMOS Mask ROM(4M(512Kx8) CMOS掩膜ROM) 4分位512Kx8）的CMOS掩模ROM分位512Kx8）的CMOS掩膜光盘
|
Samsung Semiconductor Co., Ltd.
|
| KM23V4000DETY KM23V4000DTY |
4M-Bit (512Kx8) CMOS Mask ROM(4M(512Kx8) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM684000LI KM684000LI-10 KM684000LI-10L KM684000LI |
512Kx8 bit CMOS static RAM, 85ns, low power
Quadruple Bilateral Analog Switch 14-TSSOP -40 to 85 524288亩字× 8位高速CMOS静态RAM
524,288K WORD x 8 BIT HIGH SPEED CMOS STATIC RAM 524288亩字× 8位高速CMOS静态RAM
RES 1.6K-OHM 1% 0.063W 200PPM THK-FILM SMD-0603 TR-7-PA
512Kx8 bit CMOS static RAM, 100ns, low power
512Kx8 bit CMOS static RAM, 70ns, low power
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| BS62LV4008 BS62LV4008TI BS62LV4008TC BS62LV4008STC |
From old datasheet system
Asynchronous 4M(512Kx8) bits Static RAM
Very Low Power/Voltage CMOS SRAM 512K X 8 bit 非常低功电压CMOS SRAM的为512k × 8
|
BSI[Brilliance Semiconductor]
BRILLIANCE SEMICONDUCTOR, INC.
Brilliance Semiconducto...
|
