| PART |
Description |
Maker |
| HYM71V32C735HCT4-H HYM71V32C735HCT4-K HYM71V32C735 |
32Mx72|3.3V|K/H|x18|SDR SDRAM - Registered DIMM 256MB 32Mx72 | 3.3 | | x18 | SDRAM的特别提款权-注册256MB的内
|
Fox Electronics
Hynix Semiconductor
|
| W3DG7232V75D1 W3DG7232V-D1 W3DG7232V10D1 W3DG7232V |
256MB - 32Mx72 SDRAM UNBUFFERED
|
WEDC[White Electronic Designs Corporation]
|
| HYM71V32D755HCT4 HYM71V32D755HCT4-8 HYM71V32D755HC |
32Mx72|3.3V|P/S|x18|SDR SDRAM - Registered DIMM 256MB
|
Hynix Semiconductor
|
| HYS72D32501GR-7-A |
DDR SDRAM Modules - 256MB (32Mx72) PC2100 1-bank
|
Infineon
|
| M390S3253DT1 |
32Mx72 SDRAM DIMM with PLL & Register based on 32Mx8, 4Banks 8K Ref., 3.3V Synchronous DRAMs with SPD Data Sheet
|
Samsung Electronic
|
| HYS72V32600GR-7.5 HYS72V32501GR-7.5 HYS72V128520GR |
SDRAM|32MX72|CMOS|DIMM|168PIN|PLASTIC
SDRAM|128MX72|CMOS|DIMM|168PIN|PLASTIC
SDRAM|64MX72|CMOS|DIMM|168PIN|PLASTIC
256MB (32Mx72) PC133 (3-3-3) 1-bank
1GB (128Mx72) PC133 (3-3-3) 1-bank GB的（128Mx72）的PC1333-3-3银行
?512MB (64Mx72) PC133 (3-3-3) 1-bank?
|
Infineon Technologies AG
|
| HY57V56820BT HY57V56820BLT-S HY57V56820BT-S HY57V5 |
32Mx8|3.3V|8K|K|SDR SDRAM - 256M
SDRAM|4X8MX8|CMOS|TSOP|54PIN|PLASTIC
4 Banks X 8M X 8Bit Synchronous DRAM
SDRAM - 256Mb
|
Hynix Semiconductor
|
| KBE00G003M-D411 KBE00G003M-D4110 |
NAND 512Mb*2 Mobile SDRAM 256Mb*2 NAND闪存12Mb * 2移动SDRAM 256Mb 2
SPECIALTY MEMORY CIRCUIT, PBGA107
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| GMM77332280CNTG GMM77316280CTG |
32Mx72|3.3V|5/6|x36|FP/EDO DRAM - 256MB Buffered DIMM 32Mx72 | 3.3 | 5 / 6 | x36 |计划生育/ EDO公司的DRAM - 256MB的缓冲DIMM
16Mx72|3.3V|5/6|x 18|FP/EDO DRAM - 128MB Buffered DIMM
|
Linear Technology, Corp.
|
| K4H560838E-TC/LB0 K4H560838E-TC/LA2 K4H560838E-TC/ |
DDR SDRAM 256Mb E-die (x4, x8) 256Mb的DDR SDRAM的电子芯片（了x4，x8
Quad Wide Bandwidth High Output Drive Single Supply Op Amp 16-PDIP -40 to 125
256Mb E-die DDR SDRAM Specification 66 TSOP-II
Dual Micropower Precision Low-Voltage Operational Amplifier 8-SOIC -55 to 125
10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PLCC
10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PDIP
DDR SDRAM 256Mb E-die (x4, x8)
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HYB39S256800CT-8 HYB39S256400CT-7.5 HYB39S256800CT |
256Mb (64M x 4) PC133 3-3-3
256Mb (32M x 8) PC133 3-3-3
256Mb (32M x 8) PC100 2-2-2 56Mb的（32M的8）PC100-2-2
x16 SDRAM x16内存
|
Toshiba, Corp.
SIEMENS AG
|
