| PART |
Description |
Maker |
| HY5V66GF HY5V66GF-H HY5V66GF-P |
SDRAM - 64Mb
4 Banks x 1M x 16Bit Synchronous DRAM
4Mx16|3.3V|4K|H|SDR SDRAM - 64M
x16 SDRAM x16内存
|
Hynix Semiconductor
TT electronics Semelab, Ltd.
|
| EM484M1644VTA-55L |
64Mb SDRAM
|
Electronic Theatre Controls, Inc.
|
| W3DG727V7D2 W3DG727V10D2 W3DG727V75D2 W3DG727V-D2 |
64MB - 8Mx72 SDRAM UNBUFFERED
|
White Electronic Design...
WEDC[White Electronic Designs Corporation]
|
| AD484M1644VTA-10I AD484M1644VTA-10L AD484M1644VTA- |
Ascend Semiconductor Corporation(64Mb SDRAM) 登半导体公司4MB内存
|
Integrated Silicon Solution, Inc.
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
|
| HYM71V8M655HCT6 |
8Mx64|3.3V|8/P/S|x4|SDR SDRAM - SO DIMM 64MB 8Mx64 | 3.3 | 8/P/S | x4 | SDRAM的特别提款权-4MB的内
|
Daesan Electronics, Corp.
|
| K9D1G08V0M/A-SSB0 K9S1208V0M/A-SSB0 |
64MB & 128MB SmartMediaTM Card 64MB
64MB & 128MB SmartMediaTM Card
|
http://
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HD74LVU04A |
Hex Inverters (Unbuffer)
|
Hitachi Semiconductor
|
| TC7PAU04FU07 TC7PAU04FU |
Dual Inverter (unbuffer) with 3.6 V Tolerant Input
|
Toshiba Corporation
Toshiba Semiconductor
|
| EM484M1644VTA-7F EM484M1644VTA-7FE EM484M1644VTA-6 |
64Mb (1M隆驴4Bank隆驴16) Synchronous DRAM
64Mb (1M×4Bank×16) Synchronous DRAM
|
Eorex Corporation
|
| MD5764802 MSM5718C50_MD5764802 MSM5764802 MSM5718C |
64Mb(8Mx8) concurrent RDRAM
From old datasheet system
(MSM5718C50 / MSM5764802) 18Mb (2M x 9) & 64Mb (8M x 8) Concurrent RDRAM
18Mb(2Mx9) concurrent RDRAM
|
OKI[OKI electronic componets]
OKI electronic components
|
| KIC7SU04FU |
Inverter Gate (Unbuffer)
SILICON MONOLITHIC CMOS DIGITAL INTEGRATED CIRCUIT(INVERTER)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| HY57V641620HGT-6I HY57V641620HGT-7I HY57V641620HGT |
SDRAM - 64Mb
4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54
4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 5 ns, PDSO54
x16 SDRAM x16内存
4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO54
CAP 0.01UF 50V 10% X7R SMD-0805 TR-13 PLATED-NI/SN
Ceramic Multilayer Capacitor; Capacitance:10000pF; Capacitance Tolerance: /- 10 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Package/Case:0805; Series:MLCC; Dielectric Material:Ceramic; Leaded Process Compatible:Yes
CAP SMD 0805 .01UF 50V 5%
CONNECTOR ACCESSORY
From old datasheet system
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
|
