| PART |
Description |
Maker |
| HMT351U7CFR8C-H9 HMT351U7CFR8C-RD HMT351U7CFR8C-PB |
DDR3 SDRAM Unbuffered DIMMs Based on 2Gb C-Die
DDR3L SDRAM Unbuffered DIMMs Based on 4Gb M-Die
|
Hynix Semiconductor
|
| HMT351U7CFR8A-PB HMT351U7CFR8A-H9 HMT325U7CFR8A HM |
DDR3L SDRAM Unbuffered DIMMs Based on 2Gb C-Die
|
Hynix Semiconductor
|
| HMT41GV7CMR4A-H9 HMT325V7CFR8A HMT325V7CFR8A-H9 HM |
DDR3L SDRAM VLP Registered DIMM Based on 2Gb C-die
|
Hynix Semiconductor
|
| K4S1G0732BNBSP K4S1G0732B-TC75 K4S1G0732B |
SDRAM stacked 1Gb B-die
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4H1G0638C-UC/LA2 K4H1G0738C-UC/LA2 K4H1G0738C-UC/ |
Stacked 1Gb C-die DDR SDRAM Specification
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| W3EG2128M72AFSR265D3XG |
2GB - 2x128Mx72 DDR SDRAM REGISTERED ECC, w/PLL, FBGA 2GB 2x128Mx72 ECC的DDR SDRAM的注册，瓦特/锁相环，FBGA封装
|
Murata Manufacturing Co., Ltd.
|
| M393B1K70DH0 |
240pin Registered DIMM based on 2Gb D-die
|
Samsung semiconductor
|
| M393B1K73CH0 |
240pin Registered DIMM based on 2Gb C-die
|
Samsung semiconductor
|
| K4H560838E-TC/LB0 K4H560838E-TC/LA2 K4H560838E-TC/ |
DDR SDRAM 256Mb E-die (x4, x8) 256Mb的DDR SDRAM的电子芯片（了x4，x8
Quad Wide Bandwidth High Output Drive Single Supply Op Amp 16-PDIP -40 to 125
256Mb E-die DDR SDRAM Specification 66 TSOP-II
Dual Micropower Precision Low-Voltage Operational Amplifier 8-SOIC -55 to 125
10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PLCC
10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PDIP
DDR SDRAM 256Mb E-die (x4, x8)
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| H5TQ2G43BFR-XXC |
2Gb DDR3 SDRAM
|
Hynix Semiconductor
|
| H5TQ2G83BFR H5TQ2G63BFR H5TQ2G43BFR |
2Gb DDR3 SDRAM
|
Hynix Semiconductor
|
| H5TQ2G63BFR-N0C H5TQ2G63BFR-12C H5TQ2G63BFR-11C |
2Gb DDR3 SDRAM
|
Hynix Semiconductor
|
