| PART |
Description |
Maker |
| GX60N60C2D1 |
Fast SRAM > Late Write Synchronous SRAM; Organization (word): 512K; Organization (bit): x 36; Memory capacity (bit): 16M; Supply voltage (V): 150; Operating temperature (°C): 1.5; Package: BGA (119)
|
IXYS CORP
|
| MCM63R918FC3.3R MCM63R918FC3.7R MCM63R836FC3.7R |
512K X 18 LATE-WRITE SRAM, 1.65 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, PLASTIC, FLIP CHIP, BGA-119
512K X 18 LATE-WRITE SRAM, 1.85 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, PLASTIC, FLIP CHIP, BGA-119
256K X 36 LATE-WRITE SRAM, 1.85 ns, PBGA119
|
Motorola Mobility Holdings, Inc.
MOTOROLA INC
|
| UPD44323362 UPD44323362F1-C40-FJ1 |
32M-BIT CMOS SYNCHRONOUS FAST STATIC RAM 1M-WORD BY 36-BIT HSTL INTERFACE / REGISTER-REGISTER / LATE WRITE
|
NEC Corp.
|
| GS8150V18AB-250 GS8150V36AB-250 GS8150V36AGB-250 G |
1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM 1M X 18 LATE-WRITE SRAM, 2 ns, PBGA119
1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM 512K X 36 LATE-WRITE SRAM, 2 ns, PBGA119
1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM 1M X 18 LATE-WRITE SRAM, 1.6 ns, PBGA119
1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM 512K X 36 LATE-WRITE SRAM, 1.5 ns, PBGA119
|
GSI Technology, Inc.
|
| K7P323688M-HC250 K7P323688M-GC250 |
1M X 36 LATE-WRITE SRAM, 2 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119
1M X 36 LATE-WRITE SRAM, 2 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, ROHS COMPLIANCE, BGA-119
|
TOKO, Inc.
|
| MCM69R818CZP4.4 MCM69R736CZP4.4 MCM69R736CZP4.4R M |
4M Late Write HSTL
|
Motorola, Inc
|
| MCM69R618 MCM69R536 |
1M Late Write HSTL
From old datasheet system
|
Motorola
|
| GS8170LW36AGC-250 GS8170LW36AC-350 GS8170LW36AC-35 |
18Mb ヒ1x1Lp CMOS I/O Late Write SigmaRAM
|
GSI[GSI Technology]
|
| K7Z167285A |
256Kx72 Double Late Write SigmaRAMData Sheet
|
Samsung Electronic
|
| GS8171DW72AC-350I GS8171DW72AC-333 GS8171DW72AC-30 |
18Mb ヒ1x1Dp HSTL I/O Double Late Write SigmaRAM
|
GSI[GSI Technology]
|
|
