| PART |
Description |
Maker |
| ASIDKV6520-12 DKV652012 ASI30291 DKV6520-12 |
SILICON HYPERABRUPT VARACTOR DIODE VHF-UHF BAND, 20 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, DO-7
From old datasheet system
|
Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
|
| KV1401 KV1801 KV1501 KV1501-17 KV1601 |
VARACTOR DIODES HF/VHF Super Hyperabrupt Junction TM
VHF BAND, 180 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
Microsemi Corporation
http://
MICROSEMI CORP-LOWELL
|
| KV2101A |
Silicon Hyperabrupt Tuning Varactor
|
Advanced Semiconductor
|
| SMV2026 |
Silicon Hyperabrupt Tuning Varactor Diode
|
Skyworks Solutions
|
| KV2101 KV2001 KV2501-15 KV2501-00 KV2801 KV2801-30 |
VARACTOR DIODES HF/VHF/UHF Hyperabrupt Junction
UHF BAND, 50 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
UHF BAND, 200 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
UHF BAND, 155 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
Microsemi Corporation
MICROSEMI CORP-LOWELL
|
| DKV6510-12 DKV651012 |
From old datasheet system
SILICON HYPERABRUPT VARACTOR DIODE
|
ASI[Advanced Semiconductor]
|
| GC1310 KV1963A KV1953A KV1923A KV1913A1 KV2123 KV1 |
C BAND, 3.9 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
C BAND, 0.8 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
C BAND, 0.8 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
ENHANCED PERFORMANCE SURFACE MOUNT EPSM垄芒Hyperabrupt Varactor Diodes TM
ENHANCED PERFORMANCE SURFACE MOUNT EPSM?⑷yperabrupt Varactor Diodes TM
ENHANCED PERFORMANCE SURFACE MOUNT EPSM?Hyperabrupt Varactor Diodes TM
C BAND, 16.5 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
C BAND, 1.5 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
Microsemi Corporation
MICROSEMI CORP-LOWELL
|
| MA4ST1330-1141T MA4ST1320 |
Low Voltage/Low Rs Silicon Hyperabrupt Varactor Diode 低电低卢比硅Hyperabrupt变容二极
|
TE Connectivity, Ltd.
|
