| PART |
Description |
Maker |
| IPP35CN10NG IPP35CN10NG10 IPD35CN10NG IPB35CN10NG |
OptiMOS2 Power-Transistor
|
Infineon Technologies AG
|
| BSC052N03S |
OptiMOS2 Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| IPSH6N03LB |
OptiMOS2 Power-Transistor
|
Infineon Technologies
|
| IPB16CN10NG IPP16CN10NG10 IPI16CN10NG IPD16CN10NG |
OptiMOS2 Power-Transistor
|
Infineon Technologies AG
|
| IPP06CN10LG |
OptiMOS2 Power-Transistor
|
Infineon Technologies AG
|
| IPD06N03LBG |
OptiMOS2 Power-Transistor 的OptiMOS2功率晶体
|
Infineon Technologies AG
|
| IPU10N03LA Q67042-S4238 IPD10N03LA IPS10N03LA IPF1 |
OptiMOS®2 - Power packages
OptiMOS2 Power-Transistor OptiMOS2功率晶体
30 A, 25 V, 0.0104 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
|
INFINEON[Infineon Technologies AG]
|
| BSO200N03S |
OptiMOS2 Power-Transistor
Low Voltage MOSFETs - OptiMOS? Power MOSFET, 30V, SO8, RDSon = 20mOhm, 8.8A, LL
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| BSO350N03 |
Low Voltage MOSFETs - OptiMOS? Power MOSFET, 30V, SO8, RDSon = 35mOhm, 6.0A, LL, dual
OptiMOS2 Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| BSR202N |
OptiMOS2 Small-Signal-Transistor
|
Infineon Technologies AG
|
| BSB053N03LPG |
OptiMOS2 Power-MOSFET
|
Infineon Technologies AG
|
| IPU07N03LA |
OptiMOS®2 - Power packages
OptiMOS2 Power MOSFET. 25V. TO251. RDSon = 6.5mOhm. 30A. LL ？的OptiMOS功率MOSFET25V的TO251。导通状态\u003d 6.5mOhm30A条。当地雇员？
|
Infineon
Toshiba, Corp.
|
