| PART |
Description |
Maker |
| IPP50CN10NG IPP50CN10NG10 IPI50CN10NG IPB50CN10NG |
OptiMOS2 Power-Transistor
|
Infineon Technologies AG
|
| IPP07N03LBG IPP07N03LBG08 |
OptiMOS2 Power-Transistor
|
Infineon Technologies AG
|
| BSC032N03S |
OptiMOS2 Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| IPP05N03LBG IPP05N03LBG08 |
OptiMOS2 Power-Transistor
|
Infineon Technologies AG
|
| IPD06N03LBG |
OptiMOS2 Power-Transistor 的OptiMOS2功率晶体
|
Infineon Technologies AG
|
| BSO150N03 |
Low Voltage MOSFETs - OptiMOS? Power MOSFET, 30V, SO8, RDSon = 15mOhm, 9.1A, LL, dual
OptiMOS2 Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| BSC119N03S BSC119N03SG Q7042S4292 Q7042-S4292 INFI |
OptiMOS®2 - SuperSO8, SO8, DPAK
OptiMOS2 Power-Transistor OptiMOS2功率晶体
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| BSL202SN |
OptiMOS2 Small-Signal-Transistor
|
Infineon Technologies AG
|
| BSB053N03LPG |
OptiMOS2 Power-MOSFET
|
Infineon Technologies AG
|
| IPU07N03LA |
OptiMOS®2 - Power packages
OptiMOS2 Power MOSFET. 25V. TO251. RDSon = 6.5mOhm. 30A. LL ？的OptiMOS功率MOSFET25V的TO251。导通状态\u003d 6.5mOhm30A条。当地雇员？
|
Infineon
Toshiba, Corp.
|
| BSS806N |
OptiMOS2 Small-Signal-Transistor Ultra Logic level (1.8V rated) Avalanche rated
|
TY Semiconductor Co., Ltd
|
