| PART |
Description |
Maker |
| HTT1213E |
High Frequency Amplifiers(Twin Type)
Silicon NPN Epitaxial Twin Transistor
|
Hitachi Semiconductor
Renesas Electronics Corporation
|
| BFS469L6 |
NPN Silicon RF TWIN Transistor
|
Infineon Technologies AG
|
| UPA895TD UPA895TD-T3-A |
NPN SILICON RF TWIN TRANSISTOR
|
California Eastern Labs
NEC
|
| UPA833TF99 UPA833TF-T1 UPA833TF |
NPN SILICON EPITAXIAL TWIN TRANSISTOR
|
NEC[NEC]
|
| UPA831TC UPA831TC-T1 |
NPN SILICON EPITAXIAL TWIN TRANSISTOR
|
California Eastern Laboratories
California Eastern Labs
|
| HTT1115EFTL-E HTT1115E |
Silicon NPN Epitaxial Twin Transistor
|
Renesas Electronics Corporation
|
| BFS386L6 |
RF-Bipolar - NPN Silicon TWIN mixed type RF-Transistor in TSLP-6 package ideal for VCO Modules up to 4GHz
|
Infineon
|
| UPA827 UPA827TF UPA827TF-T1 PA827TF |
High-Frequecy Low-Noise Amplifier NPN Transistor(高频低噪声放大器NPN晶体
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC5179 THIN-TYPE SMALL MINI MOLD
|
NEC Corp.
|
| 2N5038 JAN2N5039 JANTXV2N5039 2N5039 JAN2N5038 JAN |
NPN HIGH POWER SILICON TRANSISTOR 20 A, 90 V, NPN, Si, POWER TRANSISTOR, TO-204AA
NPN HIGH POWER SILICON TRANSISTOR 2 A, 90 V, NPN, Si, POWER TRANSISTOR, TO-3
From old datasheet system
(JAN2N5038 / JAN2N5039) NPN HIGH POWER SILICON TRANSISTOR
NPN Transistor
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| 2SD1692 2SD1692L 2SD1692K |
NPN SILICON DARLINGTON TRANSISTOR
From old datasheet system
NPN SILICON POWER TRANSISTOR
Low-Power, Single/Dual-Level Battery Monitors with Hysteresis
TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 3A I(C) | TO-126 晶体管|晶体管|达林顿|叩| 100V的五（巴西）总裁| 3A条一（c）|26
|
NEC Corp.
NEC, Corp.
|
| 2SD1592 2SD1592L |
Silicon transistor
NPN SILICON TRIPLE DIFFUSED TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-VOLTAGE LOW-SPEED SWITCHING
TRANSISTOR | BJT | DARLINGTON | NPN | 300V V(BR)CEO | 5A I(C) | SOT-186
|
NEC Corp.
|
