PART |
Description |
Maker |
AS8E128K32Q-250/883C AS8E128K32Q-140/883C AS8E128K |
128K x 32 EEPROM Memory Array 128K X 32 EEPROM 5V MODULE, 300 ns, CPGA66 128K x 32 EEPROM Memory Array 128K X 32 EEPROM 5V MODULE, 300 ns, CQFP68
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Austin Semiconductor, Inc PROM
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W27E010 W27E010P-55 W27E010P-45 W27E010P-90 W27E01 |
128Kx8 EEPROM 128K X 8 EEPROM 12V, 45 ns, PDIP32 128Kx8 EEPROM 128K X 8 EEPROM 12V, 45 ns, PQCC32 From old datasheet system 128K X 8 ELECTRICALLY ERASABLE EPROM
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Winbond Electronics, Corp. Winbond Electronics Corp
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28LV010RPDE-25 28LV010RT1DE-25 28LV010RT2DE-25 28L |
3.3V 1 Megabit (128K x 8-Bit) EEPROM 3.3V 1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 3V, 200 ns, DFP32 3.3V 1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 3V, 200 ns, DIP32 3.3V 1 Megabit (128K x 8-Bit) EEPROM 3.3V兆位28K的8位)的EEPROM CAP-ARR 200PF X4 100V 10% NP0(C0G) SMD-0508 PLATED-NI/SN TR-7 1K/REEL CAP ARRAY, 2 X 10NF 50V 0508X7RCAP ARRAY, 2 X 10NF 50V 0508X7R; Capacitance:10nF; Voltage rating, DC:50V; Capacitor dielectric type:Ceramic Multi-Layer; Series:W2A; Tolerance, :10%; Tolerance, -:10%; Temp, op. max:125(degree C); CAP ARRAY, 2 X 22NF 16V 0405X5RCAP ARRAY, 2 X 22NF 16V 0405X5R; Capacitance:22nF; Voltage rating, DC:16V; Capacitor dielectric type:Ceramic Multi-Layer; Series:W1A; Tolerance, :20%; Tolerance, -:20%; Temp, op. max:85(degree C); CAP ARRAY, 2 X 15PF 50V 0405NPOCAP ARRAY, 2 X 15PF 50V 0405NPO; Capacitance:0.015nF; Voltage rating, DC:50V; Capacitor dielectric type:Ceramic Multi-Layer; Series:W1A; Tolerance, :10%; Tolerance, -:10%; Temp, op. max:125(degree C); CAP ARRAY, 2 X 680PF 50V 0405NPOCAP ARRAY, 2 X 680PF 50V 0405NPO; Capacitance:0.68nF; Voltage rating, DC:50V; Capacitor dielectric type:Ceramic Multi-Layer; Series:W1A; Tolerance, :10%; Tolerance, -:10%; Temp, op. max:125(degree C); CAP ARRAY, 4 X 100PF 50V 0508NPOCAP ARRAY, 4 X 100PF 50V 0508NPO; Capacitance:0.1nF; Voltage rating, DC:50V; Capacitor dielectric type:Ceramic Multi-Layer; Series:W2A; Tolerance, :10%; Tolerance, -:10%; Temp, op. max:125(degree C); CAP ARRAY, 2 X 10NF 16V 0405X7RCAP ARRAY, 2 X 10NF 16V 0405X7R; Capacitance:10nF; Voltage rating, DC:16V; Capacitor dielectric type:Ceramic Multi-Layer; Series:W1A; Tolerance, :20%; Tolerance, -:20%; Temp, op. max:125(degree C); Ceramic Capacitor Array; Capacitor Type:Chip Array; Capacitance:22pF; Capacitance Tolerance: /- 10%; Voltage Rating:50VDC; Capacitor Dielectric Material:Multilayer Ceramic; Package/Case:0405; Termination:SMD RoHS Compliant: Yes CAP ARRAY, 2 X 1000PF 50V 0405X7RCAP ARRAY, 2 X 1000PF 50V 0405X7R; Capacitance:1nF; Voltage rating, DC:50V; Capacitor dielectric type:Ceramic Multi-Layer; Series:W1A; Tolerance, :10%; Tolerance, -:10%; Temp, op. max:125(degree C);
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Maxwell Technologies, Inc
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SST29VE010-200-4I-EHE SST29VE010-200-4I-WHE SST29V |
1 Mbit (128K x8) Page-Write EEPROM 128K X 8 FLASH 2.7V PROM, 150 ns, PDSO32 1 Mbit (128K x8) Page-Write EEPROM 128K X 8 EEPROM 3V, 150 ns, PDSO32 1 Mbit (128K x8) Page-Write EEPROM 128K X 8 EEPROM 3V, 200 ns, PDSO32
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Silicon Storage Technology, Inc.
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AT49HF010 AT49HF010-45JC AT49HF010-45JI AT49HF010- |
1-Megabit (128K x 8) 5-volt only CMOS flash memory, 40mA active, 0.3mA standby THERMISTOR, NTC; Series:B578; Thermistor type:NTC; Resistance:3kR; Tolerance, resistance: /-1%; Beta value:3988; Temperature, lower limit, beta DB25SC37 DSUB 1-Megabit 128K x 8 5-volt Only CMOS Flash Memory 128K X 8 FLASH 5V PROM, 55 ns, PDIP32 1-Megabit 128K x 8 5-volt Only CMOS Flash Memory 128K X 8 FLASH 5V PROM, 55 ns, PQCC32
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ATMEL[ATMEL Corporation] Atmel Corp. Atmel, Corp.
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ACT-E128K32C-150P7Q ACT-E128K32C-120P7Q ACT-E128K3 |
128K X 32 EEPROM 5V MODULE, 150 ns, CPGA66 CERAMIC, PGA-66 128K X 32 EEPROM 5V MODULE, 120 ns, CPGA66 CERAMIC, PGA-66 128K X 32 EEPROM 5V MODULE, 250 ns, CPGA66 CERAMIC, PGA-66 128K X 32 EEPROM 5V MODULE, 200 ns, CQMA68 128K X 32 EEPROM 5V MODULE, 250 ns, CQMA68 128K X 32 EEPROM 5V MODULE, 120 ns, CQMA68
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Aeroflex, Inc.
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AT17LV002A AT17LV010A AT17LV128A AT17LV256A AT17LV |
2M-bit Configuration EEPROM (5V and 3.3V), Altera Pinout. 1M-bit FPGA Configuration EEPROM (5V and 3.3V). Altera Pinout. 128K-bit FPGA Configuration EEPROM (5V and 3.3V). Altera Pinout. 256K-bit FPGA Configuration EEPROM (5V and 3.3V). Altera Pinout. 512K-bit FPGA Configuration EEPROM (5V and 3.3V). Altera Pinout. 65K-bit FPGA Configuration EEPROM (5V and 3.3V). Altera Pinout. FPGA configuration EEPROM memory. Memory size 2-Mbit. FPGA configuration EEPROM memory. Memory size 1-Mbit.
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Atmel
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PIC16F62XT-20E_SS PIC16LF62X-20_P PIC16F62X-20_SO |
FLASH-Based 8-Bit CMOS Microcontroller Code Hopping Encoder(KeeLoq 码编码器) RESISTOR,ARRAY,2.2K, 5% RES ARRAY 100 OHM 4TERM 2RES SMD BBG ECL GATE OR/NOR TRPL; Package: SOEIAJ-16; No of Pins: 16; Container: Tape and Reel; Qty per Container: 2000 Triple 2-3-2-Input OR/NOR Gate; Package: SOEIAJ-16; No of Pins: 16; Container: Tape and Reel; Qty per Container: 2000 Enhanced FLASH/EEPROM 8-Bit Microcontroller(驱动/吸收电流高,工作电压2.0~5.5V,微控制 Enhanced FLASH 8-Bit CMOS Microcontroller with A/D Converter and EEPROM Data Memory(带ADC转换器和EEPROM数据存储器的闪速CMOS微控制器) Enhanced FLASH/EEPROM 8-Bit Microcontroller With A/D Module(驱动/吸收电流高,工作电压3.0~5.5V,微控制 Enhanced FLASH/EEPROM 8-Bit Microcontroller With A/D Module(驱动/吸收电流高,工作电压2.5~5.5V,微控制 8-Pin, 8-Bit CMOS Enhanced FLASH Microcontroller with A/D Converter and EEPROM Data Memory(-2.5~5.5V,具ADC,闪速微控制 OTP 8-Bit CMOS Microcontroller with EEPROM Data Memory(工作电压2.5~5.5V路比较器,微控制 2K 5.0V IIC serial EEPROMs(2.5V~5.5V,2K1M次擦写周ISO7816标准) 1K 5.0V IIC serial EEPROMs(2.5V~5.5V,1K1M次擦写周ISO7816标准) 256K 5.0V SPI Bus Serial EEPROM(4.5~5.5V,256K浣?SPI?荤嚎涓茶?EEPROM)
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Microchip Technology Inc.
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ST1335 ST1355-CW4 ST1335-BD10 ST1335-BD15 ST1335-B |
5-CONTACT MEMORY CARD IC 272 BIT EEPROM WITH ADVANCED SECURITY MECHANISMS 5V, 3.3V, ISR High-Performance CPLDs NX2LP DEVELOPMENT KIT KIT DEV MOBL-USB FX2LP18 MoBL® 4-Mbit (256K x 16) Static RAM MoBL® 1-Mbit (64K x 16) Static RAM MoBL® 1 Mbit (128K x 8) Static RAM MoBL® 2-Mbit (128K x 16) Static RAM (ST1335/13361355) 5-Contact Memory Card IC 272-bit EEPROM with Advanced Security Mechanisms MoBL® 1-Mbit (64K x 16) Static RAM EEPROM 5V, 3.3V, ISR™ High-Performance CPLDs EEPROM MoBL® 4-Mbit (256K x 16) Static RAM EEPROM 5-Contact Memory Card IC 272-bit EEPROM with Advanced Security Mechanisms 5,联系记忆卡IC 272位具有高级安全机制的EEPROM
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SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导 ST Microelectronics STMicroelectronics N.V.
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AT28C010E-12JC AT28C010E-12PC AT28C010E-12TI AT28C |
1 Megabit 128K x 8 Paged CMOS E2PROM Quadruple Bilateral Analog Switch 14-SOIC -40 to 85 High Speed CMOS Logic Triple 3-Input OR Gates 14-TSSOP -55 to 125 128K X 8 EEPROM 5V, 150 ns, PDIP32 Quadruple Bilateral Analog Switch 14-TSSOP -40 to 85 128K X 8 EEPROM 5V, 150 ns, PQCC32 High Speed CMOS Logic Triple 3-Input OR Gates 14-TSSOP -55 to 125 128K X 8 EEPROM 5V, 150 ns, PQCC32 64K 8K x 8 Battery-Voltage CMOS E2PROM 128K X 8 EEPROM 5V, 200 ns, PDSO32 High Speed CMOS Logic Triple 3-Input OR Gates 14-TSSOP -55 to 125 128K X 8 EEPROM 5V, 120 ns, PDIP32 Quadruple Bilateral Analog Switch 14-SSOP -40 to 85 128K X 8 EEPROM 5V, 150 ns, PDSO32
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Atmel Corp. Atmel, Corp.
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25C256 CAT25C256 25C128 CAT25C128 CAT25C256S16-1.8 |
256K SPI serial CMOS EEPROM 1.8-6.0V 128K SPI serial CMOS EEPROM 2.5-6.0V SPI Serial EEPROM SPI串行EEPROM 128K/256K-BitSPISerialCMOSE2PROM 64K 8K x 8 Battery-Voltage CMOS E2PROM 64KK的8电池电压的CMOS E2PROM 128K SPI serial CMOS EEPROM 1.8-6.0V 256K SPI serial CMOS EEPROM 2.5-6.0V 128K/256K-Bit SPI Serial CMOS E2PROM
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http:// STMicroelectronics N.V. Semtech, Corp. Abracon, Corp. CatalystSemiconductor CATALYST[Catalyst Semiconductor]
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