| PART |
Description |
Maker |
| SABC541U-1EN SABC541U-1ENB12 SABC541U-1ENCA SABC54 |
8-Bit USB Microcontroller with on-chi...
|
Infineon
|
| TG110-E050N5 TG110-E055N5 TG110-E120N5 TG110-E125N |
Extended Temperature Range, E-Ultra?/a> 10/100BASE-TX SOIC-16 Magnetic Modules
Extended Temperature Range, E-Ultra⑩ 10/100BASE-TX SOIC-16 Magnetic Modules
Extended Temperature Range, E-Ultra 10/100BASE-TX SOIC-16 Magnetic Modules
Extended Temperature Range/ E-Ultra 10/100BASE-TX SOIC-16 Magnetic Modules
DIODE ZENER DUAL ISOLATED 200mW 16Vz 7.8mA-Izt 0.05 0.1uA-Ir 12 SOT-363 3K/REEL
Extended Temperature Range, E-Ultra10/100BASE-TX SOIC-16 Magnetic Modules
|
List of Unclassifed Manufacturers
ETC[ETC]
N.A.
Electronic Theatre Controls, Inc.
|
| KM416V1204BJ KM416V1004BT-L7 KM416V1204BT-L7 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns
1M x 16BIT CMOS DYNAMIT RAM WITH EXTENDED DATA OUT
|
Samsung Electronic
Samsung semiconductor
|
| EL2045 EL2045CS-T13 EL2045CS-T7 |
Op Amp, 100MHz, Gain-of-2 Stable, Low Power 5.2mA, SR=275V/s, Dual or Single Supply (36V)
Low-Power 100MHz Gain-of-2 Stable Operational Amplifier
|
Intersil Corporation
|
| GLT41216-30J4 GLT41216-30TC GLT41216-35J4 GLT41216 |
30ns; 64K x 16 CMOS dynamic RAM with extended data output
35ns; 64K x 16 CMOS dynamic RAM with extended data output
40ns; 64K x 16 CMOS dynamic RAM with extended data output
45ns; 64K x 16 CMOS dynamic RAM with extended data output
|
G-LINK Technology
|
| HFBR-5908E HFCT-5908E HFBR-0566 |
622 Mbit/s MMF (500m) SFF Transceiver for SONET/SDH. ATM (OC-12): Extended shield 622兆位/ s的SONET的人造纤维（500）准系统收发 SDH的。自动柜员机（的OC - 12）：扩展屏蔽
622 Mbit/s SMF (15km) SFF Transciever for SONET/SDH. ATM (OC-12): Extended shield
HFBR-0566 · Evaluation Kit for MT-RJ 622 Mb/s Multimode and Singlemode ATM Applications
HFCT-5908E · 622 Mbit/s SMF (15km) SFF Transciever for SONET/SDH, ATM (OC-12): Extended shield
HFBR-5908E · 622 Mbit/s MMF (500m) SFF Transceiver for SONET/SDH, ATM (OC-12): Extended shield
|
Avago Technologies, Ltd.
Agilent (Hewlett-Packard)
|
| KM48V8104B KM48V8004B KM48V8004BKL-5 KM48V8004BKL- |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns
8M x 8bit CMOS dynamic RAM with extended data out, 60ns
8M x 8bit CMOS dynamic RAM with extended data out, 50ns
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| EL2245CS-T13 EL2245CS-T7 EL2445 EL2445CS-T13 EL244 |
Dual/Quad Low-Power 100MHz Gain-of-2 Stable Op Amp
Op Amp, Quad 100MHz, Gain-of-2 Stable, Low-Power 5.2mA, SR=275V/s, Dual or Single Supply (36V)
Op Amp, Dual 100MHz, Gain-of-2 Stable, Low-Power 5.2mA, SR=275V/s, Dual or Single Supply (36V)
Dual/Quad Low-Power 100MHz Gain-of-2 Stable Op Amp 1 CHANNEL, VIDEO AMPLIFIER, PDIP8
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| Q67100-H9020 SDE2526 Q67100-H3262 Q67100-H3261 SDE |
Nonvolatile Memory 2-Kbit E2PROM with I2C Bus Interface with Extended Temperature Range 非易失性内与I2C总线接口与千位E2PROM的扩展温度范
OSC 5V SMT 7X5 CMOS PROGRM 256 X 8 I2C/2-WIRE SERIAL EEPROM, PDIP8
Nonvolatile Memory 2-Kbit EEPROM with IIC Bus Interface with Extended Temperature Range(2-K位EEPROM(带IIC总线接口,扩展温度范围))
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| KM416C1004CJ-5 KM416C1004CJ-6 KM416C1004CJL-6 KM41 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=64ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=64ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=16ms
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh
|
Samsung Electronic
|
