PART |
Description |
Maker |
M29W400DT M29W400DT45M1E M29W400DT45M1F M29W400DT4 |
4 Mbit (512Kb x8 or 256Kb x16 Boot Block) 3V Supply Flash Memory 4 Mbit (512Kb x8 or 256Kb x16 / Boot Block) 3V Supply Flash Memory 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) 3V Supply Flash Memory 4兆位12KB的x856Kb的x16插槽,引导块V电源快闪记忆
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STMICROELECTRONICS[STMicroelectronics] ST Microelectronics 意法半导 STMicroelectronics N.V.
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M29F002BT90P6 M29F002BT120K1 M29F002BT120K1T M29F0 |
From old datasheet system 2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory 2 MBIT (256KB X8, BOOT BLOCK) SINGLE SUPPLY FLASH MEMORY
|
STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|
M27V400 M27V400-100B1TR M27V400-100B6TR M27V400-10 |
NND - 4 MBIT (512KB X8 OR 256KB X16) UV EPROM AND OTP EPROM 4 Mbit 512Kb x8 or 256Kb x16 UV EPROM and OTP EPROM 4兆位512KB的x856Kb的x16紫外线存储器和OTP存储
|
SGS Thomson Microelectronics STMicroelectronics N.V. 意法半导 ST Microelectronics
|
M27W400 M27W400-100B6TR M27W400-100F6TR M27W400-10 |
4 Mbit (512Kb x8 or 256Kb x16), Low Voltage UV EPROM and OTP EPROM 512K X 8 UVPROM, 100 ns, CDIP40 4 Mbit 512Kb x8 or 256Kb x16 Low Voltage UV EPROM and OTP EPROM 4兆位512KB的x856Kb的x16低压紫外线可擦写可编程只读存储器和OTP存储 256 Kbit 32Kb x 8 Low Voltage UV EPROM and OTP EPROM
|
SGS Thomson Microelectronics STMicroelectronics N.V. 意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|
M36W432BG M36W432BG70ZA1T M36W432BG70ZA6T M36W432B |
32 Mbit 2Mb x16, Boot Block Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product
|
STMICROELECTRONICS[STMicroelectronics]
|
M27W201-80K6TR M27W201-200NZ6TR M27W201-80NZ6TR M2 |
2 MBIT (256KB X8) LOW VOLTAGE OTP EPROM Test Spring Probe; Current Rating:3A; Leaded Process Compatible:Yes; Length:0.060"; Peak Reflow Compatible (260 C):No; Tip/Nozzle Style:90 Concave RoHS Compliant: Yes 2兆位56Kb × 8低压紫外线可擦写可编程只读存储器和OTP存储 Triple 3-Input Positive-AND Gates 14-SO 0 to 70 Dual J-K Positive-Edge-Triggered Flip-Flops With Clear And Preset 16-SO 0 to 70 Triple 3-Input Positive-AND Gates 14-PDIP 0 to 70 Triple 3-Input Positive-AND Gates 14-SOIC 0 to 70 Dual J-K Positive-Edge-Triggered Flip-Flops With Clear And Preset 16-SOIC 0 to 70 Dual J-K Positive-Edge-Triggered Flip-Flops With Clear And Preset 16-PDIP 0 to 70 2 Mbit 256Kb x 8 Low Voltage UV EPROM and OTP EPROM 2 MBIT (256KB X8) LOW VOLTAGE OTP EPROM
|
STMicroelectronics N.V. 意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|
M29F002BNT STMICROELECTRONICS-M29F002BNT90P6T STMI |
2 Mbit 256Kb x8 / Boot Block Single Supply Flash Memory
|
ST Microelectronics
|
M27W201 5858 |
2 Mbit (256Kb x 8) Low Voltage OTP EPROM From old datasheet system
|
STMicro
|
M29W400DB |
4 MBIT (512KB X8 OR 256KB X16, BOOT BLOCK) 3V SUPPLY FLASH MEMORY
|
STMicroelectronics
|
M29W022BT55K1T M29W022BT |
2 Mbit 256Kb x8, Boot Block Low Voltage Single Supply Flash Memory
|
STMicroelectronics 意法半导
|
M29F400BB45N1E M29F400BB45N1F M29F400BB45N3E M29F4 |
4 Mbit (512Kb x8 or 256Kb x16, Boot Block) single supply Flash memory
|
STMICROELECTRONICS[STMicroelectronics]
|