| PART |
Description |
Maker |
| IDT70T3589S-200DRI IDT70T3589S-133BF IDT70T3589S-1 |
HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 64K X 36 DUAL-PORT SRAM, 15 ns, PQFP208
HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 128K X 36 DUAL-PORT SRAM, 15 ns, PQFP208
HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 64K X 36 DUAL-PORT SRAM, 12 ns, PQFP208
HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 128K X 36 DUAL-PORT SRAM, 12 ns, PQFP208
HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 高速与3.3V 2.5V56/128/64K × 36 SYNCHRONOU S双，端口静态RAM.5V的接
HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 64K X 36 DUAL-PORT SRAM, 12 ns, PBGA256
|
Integrated Device Technology, Inc.
|
| M21L216128A M21L216128A-10J M21L216128A-10T M21L21 |
128 K x 16 SRAM HIGH SPEED CMOS SRAM
|
List of Unclassifed Manufacturers
ETC
|
| LPC3220FET296 |
ARM926EJ-S with 128 kB SRAM, USB High-speed OTG, SD-MMC, NAND flash controller
|
NXP Semiconductors N.V.
|
| ACT-PS512K8W-012L2I ACT-PS512K8Y-017L2T ACT-PS512K |
High speed 4 Megabit plastic monolithic SRAM. Options burn-in. Speed 12ns.
High speed 4 Megabit plastic monolithic SRAM. Options temp cycle & burn-in. Speed 17ns.
High speed 4 Megabit plastic monolithic SRAM. Options none. Speed 10ns.
High speed 4 Megabit plastic monolithic SRAM. Options temp cycle. Speed 15ns.
High speed 4 Megabit plastic monolithic SRAM. Options temp cycle & burn-in. Speed 25ns.
High speed 4 Megabit plastic monolithic SRAM. Options temp cycle & burn-in. Speed 20ns.
|
Aeroflex Circuit Technology
|
| IC61LV2568 IC61LV2568-8TI IC61LV2568-10K IC61LV256 |
ASYNCHRONOUS STATIC RAM, High Speed A.SRAM
256K x 8 Hight Speed SRAM with 3.3V
|
ICSI[Integrated Circuit Solution Inc]
|
| R1RW0404DGE-2PR R1RW0404D R1RW0404DGE-2LR REJ03C01 |
Memory>Fast SRAM>Asynchronous SRAM
4M HIGH SPEED SRAM (1-MWORD X 4-BIT)
|
RENESAS[Renesas Electronics Corporation]
|
| HM62W8511HCLJP-12 HM62W8511HC HM62W8511HCJP-10 HM6 |
Memory>Fast SRAM>Asynchronous SRAM
4M High Speed SRAM (512-kword x 8-bit)
BOX 5.0X1.85X1.0 W/CLP BLK
|
RENESAS[Renesas Electronics Corporation]
Renesas Electronics Corporation.
|
| IDT70V3589S166BC |
HIGH-SPEED 3.3V 128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 64K X 36 DUAL-PORT SRAM, 12 ns, PBGA256
|
Integrated Device Technology, Inc.
|
| IC61LV256- IC61LV256 IC61LV256-15TG IC61LV256-8TIG |
32K x 8 Hight Speed SRAM with 3.3V
32K x 8 Hight Speed SRAM with 3.3V 32K的8 Hight高速SRAM.3V
ASYNCHRONOUS STATIC RAM, High Speed A.SRAM
|
Integrated Circuit Solu...
Ecliptek, Corp.
ICSI[Integrated Circuit Solution Inc]
|
| HM3-65789 HM3-65788H-2 HM3-65788H-5 HM3-65788H-8 H |
HIGH SPEED CMOS SRAM
HIGH SPEED CMOS SRAM 高速CMOS的SRAM
560KBITS BRAM 400000 SYSTEM GATES 404 I/ - NOT RECOMMENDED for NEW DESIGN
|
List of Unclassifed Man...
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
http://
|
| BAS70-T1 Q62702A1173 BAS70T1 BAS70 Q62702A674 |
128 x 128 pixel format, LED or EL Backlight available
HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor General-purpose diodes for high-speed switching)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
