| PART |
Description |
Maker |
| IXBT42N170A IXBH42N170A |
Discrete IGBTs
BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| SG50N06DS SG50N06S |
Discrete IGBTs
|
Sirectifier Global Corp.
Sirectifier Semiconductors
|
| SG23N06DT SG23N06T |
Discrete IGBTs
|
Sirectifier Global Corp.
Sirectifier Semiconductors
|
| SG50N06T SG50N06DT |
Discrete IGBTs
|
Sirectifier Global Corp.
Sirectifier Semiconductors
ETC[ETC]
List of Unclassifed Manufacturers
|
| GT40RR21 |
Discrete IGBTs Silicon N-Channel IGBT
|
Toshiba Semiconductor
|
| HGTD8P50G1S HGTD8P50G1 HGTP8P50G1 |
8A, 500V P-Channel IGBTs
8A 500V P-Channel IGBTs
Mechanism, 2-inch w/front paper feed and partial cutter
8A/ 500V P-Channel IGBTs
|
http://
INTERSIL[Intersil Corporation]
|
| IXGX64N60B3D1 IXGR48N60C3D1 IXGR48N60B3D1 IXGP48N6 |
600V GenX3 IGBTs next generation 600V IGBTs for power conversion applications
|
IXYS Corporation
|
| IRG4BC40K |
Insulated Gate Bipolar Transistors (IGBTs)(短路额定超快速绝缘栅型双极型晶体 绝缘门双极晶体管IGBTs）（短路额定超快速绝缘栅型双极型晶体管）
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.1V, @Vge=15V, Ic=25A)
600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| 232266296724 232266296 232266296209 232266296211 2 |
PTC Thermistors For Degaussing, Dual, Mono And Double Mono Cased PTC的有关消磁热敏电阻，双，单声道和双声道套
|
Vishay Intertechnology, Inc.
VISAY[Vishay Siliconix]
Vishay Intertechnology,Inc.
|
| ILA03N60 ILB03N60E3045A ILD03N60 ILP03N60 |
IGBTs & DuoPacks - 3A / 600V LightMOS in TO220 FullPak
IGBTs & DuoPacks - 3A / 600V LightMOS in TO263
IGBTs & DuoPacks - 3A / 600V LightMOS in DPak
|
Infineon
|
