| PART |
Description |
Maker |
| MF34M1-LZCATXX MF3257-LZCATXX MF3513-LZCATXX MF312 |
512Kb, 8/16-bit data bus static RAM card
128Kb, 8/16-bit data bus static RAM card
STATIC RAM CARDS
8/16-bit Data Bus Static RAM Card 16位产品数据总线静态存储器
256Kb, 8/16-bit data bus static RAM card
|
Mitsubishi Electric Semiconductor
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| ADCLK914BCPZ-R7 ADCLK914BCPZ-R2 ADCLK914BCPZ-WP |
BUFFER AMPLIFIER, QCC16
Ultrafast, SiGe, Open-Collector HVDS Clock/Data Buffer
|
ANALOG DEVICES INC
|
| KSB1151 KSB1151YS KSB1151YSTSSTU KSB1151YSTSTU KSB |
Low Collector-Emitter Saturation Voltage Large Collector Current
PNP Epitaxial Silicon Transistor
|
FAIRCHILD[Fairchild Semiconductor]
|
| SMBTA1407 |
NPN Silicon Darlington Transistor High collector current Low collector-emitter saturation voltage
|
http://
|
| ACT-S512K8N-025F4Q ACT-S512K8N-025F4C ACT-S512K8N- |
IpSec Security Processor
Quadruple 2-Line To 1-Line Data Selectors/Multiplexers 16-SOIC 0 to 70
Dual 2-Line to 4-Line Decoders/Demultiplexers with Open-Collector Outputs 16-SO 0 to 70
Quadruple 2-Line To 1-Line Data Selectors/Multiplexers 16-PDIP 0 to 70
Quadruple 2-Line To 1-Line Data Selectors/Multiplexers 16-SO 0 to 70
NAMEPLATE, YEL; Colour:Yellow Name Plate RoHS Compliant: Yes
ACT-S512K8 High Speed 4 Megabit Monolithic SRAM 行为S512K8高速SRAM兆位单片
512K X 8 CACHE SRAM, 35 ns, CDSO36 0.435 X 0.920 INCH, 0.184 INCH HEIGHT, HERMETIC SEALED, CERAMIC, SOJ-36
|
Aeroflex Inc.
Aeroflex, Inc.
|
| BSP60 BSP62 Q62702-P1166 Q62702-P1168 BSP60BSP62 B |
From old datasheet system
PNP Silicon Darlington Transistors (High collector current Low collector-emitter saturation voltage)
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| 2SA1625 |
High voltage switch. Collector-base voltage: Vcbo = -400V. Collector-emitter voltage: Vceo = -400V. Emitter-base voltage Vebo = -7V. Collector dissipation: Pc(max) = o.75W.
|
USHA India LTD
|
| IDT5993A-5QI IDT5993A-5Q 5993A_DATASHEET IDT5993A- |
From old datasheet system
IGBT Module; Continuous Collector Current, Ic:400A; Collector Emitter Saturation Voltage, Vce(sat):1.7V; Power Dissipation, Pd:890W; Collector Emitter Voltage, Vceo:250V; Package/Case:Module; Transistor Polarity:N Channel RoHS Compliant: Yes
IGBT Module; Continuous Collector Current, Ic:400A; Collector Emitter Saturation Voltage, Vce(sat):2.8V; Power Dissipation, Pd:1500W; Collector Current:400A; Collector Emitter Voltage, Vceo:600V; Leaded Process Compatible:No RoHS Compliant: No
IGBT Module; Continuous Collector Current, Ic:30A; Collector Emitter Saturation Voltage, Vce(sat):2.8V; Power Dissipation, Pd:150W; Collector Current:30A; Collector Emitter Voltage, Vceo:600V; Leaded Process Compatible:No RoHS Compliant: No
IGBT Module; Continuous Collector Current, Ic:400A; Collector Emitter Saturation Voltage, Vce(sat):2.2V; Power Dissipation, Pd:960W; Collector Emitter Voltage, Vceo:600V; Package/Case:Module; Transistor Polarity:N Channel RoHS Compliant: Yes
PROGRAMMABLE SKEW PLL CLOCK DRIVER TURBOCLOCK PLL BASED CLOCK DRIVER, 8 TRUE OUTPUT(S), 0 INVERTED OUTPUT(S), PDSO28
Scan Test Devices With 18-Bit Universal Bus Transceiver 64-LQFP -40 to 85 可编程相偏PLL时钟驱动器TURBOCLOCK
|
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
| 2SB1643 |
High collector to emitter VCEO. High collector power dissipation PC.
|
TY Semiconductor Co., Ltd
|
| MJE210 |
PNP (COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| 2SC3443 |
High hFE=150 to 800. High collector current (Ic=2A). High collector dissipation Pc=500mW.
|
TY Semiconductor Co., Ltd
|
