PART |
Description |
Maker |
NTE5513 NTE5511 NTE5512 |
Silicon controlled rectifier (SCR), 5 Amp. Peak reverse voltage (repetitive) Vrm(rep) = 400V. Forward current RMS Ifrms = 5A. Silicon Controlled Rectifier (SCR) 5 Amp
|
NTE[NTE Electronics]
|
NTE5548 NTE5541 NTE5545 |
Silicon controlled rectifier (SCR). Repetitive peak off-state & reverse voltage Vdrm,Vrrm = 400V. RMS on-state current 35A. Silicon Controlled Rectifier (SCR) 35 Amp
|
NTE[NTE Electronics]
|
S4060 S4060M S4060D S4060U |
10A sensitive-gate silicon controlled rectifier. Vrrxm, 25V. 10A sensitive-gate silicon controlled rectifier. Vrrxm, 400V. 10A sensitive-gate silicon controlled rectifier. Vrrxm, 600V. 10 AMPERE SENSITIVE GATE SILICON CONTROLLED RECTIFIERS
|
General Electric Solid State ETC[ETC]
|
IRKL41-06 IRKL41-08 IRKL41-14 |
Silicon Controlled Rectifier, 62.8 A, 600 V, SCR, TO-240AA Silicon Controlled Rectifier, 62.8 A, 800 V, SCR, TO-240AA Silicon Controlled Rectifier, 62.8 A, 1400 V, SCR, TO-240AA
|
Vishay Semiconductors
|
BT152-600 BT152 |
600V Vdrm 20A Sensitive Gate Silicon Controlled Rectifier, 1.7@40AV Peak On-State Voltage, 200V/μs Rise of Off-State Voltage Silicon Controlled Rectifiers
|
SEMIWELL[SemiWell Semiconductor]
|
MCR264-4-D MCR264-4 |
Silicon Controlled Rectifier Reverse Blocking Thyristor(40A400V硅控整流器反向截止晶闸管) 40 A, 200 V, SCR, TO-220AB Silicon Controlled Rectifiers Reverse Blocking Thyristors
|
ON Semiconductor
|
IRKH41-12 IRKH41-14 |
Silicon Controlled Rectifier, 62.8 A, 1200 V, SCR, TO-240AA Silicon Controlled Rectifier, 62.8 A, 1400 V, SCR, TO-240AA
|
Vishay Semiconductors
|
MCR106-6G MCR106-8G MCR106-8 MCR106 MCR106-6 MCR10 |
Sensitive Gate Silicon Controlled Rectifier; Package: TO-225; No of Pins: 3; Container: Bulk; Qty per Container: 500 4 A, 600 V, SCR, TO-225AA SENSITIVE GATE SILICON CONTROLLED RECTIFIERS
|
ONSEMI[ON Semiconductor]
|
R6031.522PSYA R6221.530PSYA R6220.530PSYA R9GS2010 |
220 A, 150 V, SILICON, RECTIFIER DIODE R60, 1 PIN 300 A, 150 V, SILICON, RECTIFIER DIODE R62, 2 PIN 300 A, 50 V, SILICON, RECTIFIER DIODE R62, 2 PIN 1000 A, 2000 V, SILICON, RECTIFIER DIODE R9G, 2 PIN 350 A, 2200 V, SILICON, RECTIFIER DIODE 100 A, 200 V, SILICON, RECTIFIER DIODE 200 A, 1500 V, SILICON, RECTIFIER DIODE 1500 A, 1200 V, SILICON, RECTIFIER DIODE 125 A, 800 V, SILICON, RECTIFIER DIODE 150 A, 1200 V, SILICON, RECTIFIER DIODE 400 A, 200 V, SILICON, RECTIFIER DIODE 800 A, 3200 V, SILICON, RECTIFIER DIODE 350 A, 700 V, SILICON, RECTIFIER DIODE 400 A, 900 V, SILICON, RECTIFIER DIODE 100 A, 1500 V, SILICON, RECTIFIER DIODE 1000 A, 1500 V, SILICON, RECTIFIER DIODE 1000 A, 1700 V, SILICON, RECTIFIER DIODE 800 A, 3100 V, SILICON, RECTIFIER DIODE 250 A, 50 V, SILICON, RECTIFIER DIODE 800 A, 3600 V, SILICON, RECTIFIER DIODE 330 A, 500 V, SILICON, RECTIFIER DIODE
|
Powerex, Inc. POWEREX INC
|
C106 C106S C106A C106B C106C C106D C106E C106F C10 |
4A sensitive-gate silicon controlled rectifier. Vrrm 700V. 4-A Sensitive-Gate Silicon Controlled Rectifiers
|
General Electric Solid State GESS[GE Solid State] http://
|
MCR649AP-9 MCR649AP-3 MCR649AP-4 MCR649AP-8 MCR649 |
SILICON CONTROLLED RECTIFIER
|
Digitron Semiconductors
|
|