| PART |
Description |
Maker |
| AK49064SP-10 AK44064SP-10 AK44256SN-12 AK411024SRM |
64K X 9 MULTI DEVICE DRAM MODULE, 100 ns, SMA30
64K X 4 MULTI DEVICE DRAM MODULE, 100 ns, SMA22
256K X 4 MULTI DEVICE DRAM MODULE, 120 ns, SMA22
1M X 1 MULTI DEVICE DRAM MODULE, 150 ns, SMA22
128K X 1 MULTI DEVICE DRAM MODULE, 150 ns, CDIP18
64K X 2 MULTI DEVICE DRAM MODULE, 150 ns, CDIP18
|
|
| HN7G02FU |
TOSHIBA Multi Chip Discrete Device
|
TOSHIBA[Toshiba Semiconductor]
|
| SSM6H19NU |
Multi-chip discrete device (N-ch SBD)
|
TOSHIBA
|
| SKY77602 |
Multi-Band, Multi-Mode (3G) Power Amplifier Module w/ PA Distribution Switch
|
Skyworks Solutions Inc.
|
| SKY77604 |
Multi-Mode / Multi-Band Power Amplifier Module for Next Generation GGE and HSPA Handsets
|
Skyworks Solutions Inc.
|
| SD103AWS |
0.35AMP Surf ace Mount Schottky Barrier Rectifiers
|
SeCoS Halbleitertechnologie GmbH
|
| WED2ZL361MSJ-BC WED2ZL361MSJ26BI WED2ZL361MSJ42BC |
NBL SSRAM MCP
1M X 36 MULTI DEVICE SRAM MODULE, 2.6 ns, PBGA119
1M X 36 MULTI DEVICE SRAM MODULE, 4.2 ns, PBGA119
|
WHITE ELECTRONIC DESIGNS CORP
|
| PUMA68SV32000BM-020 PUMA68SV32000BI-015 |
1M X 32 MULTI DEVICE SRAM MODULE, 20 ns, PQCC68 25.27 X 25.27 MM, 5.08 MM HEIGHT, PLASTIC, LCC-68
1M X 32 MULTI DEVICE SRAM MODULE, 15 ns, PQCC68
|
ST Microelectronics
|
| SSM6G18NU |
Silicon P Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode
Multi-chip discrete device (P-ch SBD)
|
Toshiba Semiconductor
|
| SSM5H11TU |
Silicon N Channel MOS Type (U-MOS3)/Silicon Epitaxial Schottky Barrier Diode
Multi-chip discrete device (N-ch SBD)
|
Toshiba Semiconductor
|
