| PART |
Description |
Maker |
| APT11GP60K APT11GP60SA |
MOSFET
POWER MOS 7 IGBT
41 A, 600 V, N-CHANNEL IGBT, TO-263AB
|
Advanced Power Technolo...
Advanced Power Technology
MICROSEMI POWER PRODUCTS GROUP
|
| APT46GA90JD40 |
High Speed PT IGBT
Insulated Gate Bipolar Transistor - Power MOS 8; Package: ISOTOP®; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 46; 87 A, 900 V, N-CHANNEL IGBT
|
Microsemi Corporation
Microsemi, Corp.
|
| APT65GP60L2DQ2 APT65GP60L2DQ2G |
POWER MOS 7 IGBT
|
Advanced Power Technology Ltd.
|
| APT40GP60JDQ2 |
POWER MOS 7 IGBT
|
Advanced Power Technology
|
| APT40GP90JDQ2 |
POWER MOS 7 IGBT
|
Advanced Power Technology
|
| APT50GP60J |
POWER MOS 7 IGBT IGBT的功率MOS 7
|
Advanced Power Technology, Ltd.
|
| APT75GP120JDQ3 |
POWER MOS 7 IGBT IGBT的功率MOS 7
|
Advanced Power Technology, Ltd.
|
| APT65GP60B2 |
MOSFET
POWER MOS 7 IGBT
|
Advanced Power Technology
http://
|
| APT13GP120K |
MOSFET
POWER MOS 7 IGBT
|
Advanced Power Technology
|
| APT40GP60B APT40GP60S |
POWER MOS 7 IGBT
MOSFET
|
Advanced Power Technolo...
Advanced Power Technology
|
