| PART |
Description |
Maker |
| FS15R12VT3 |
IGBT-modules
IGBT Modules up to 1200V SixPACK; Package: AG-EASY750-1; IC (max): 15.0 A; VCE(sat) (typ): 1.7 V; Configuration: SixPACK; Technology: IGBT3; Housing: EasyPACK 750;
|
eupec GmbH
Infineon Technologies
|
| GB50XF120K |
1200V 50A Low Vce Non Punch Through IGBT in a Econo2 6Pack Package
IGBT SIXPACK MODULE
|
IRF[International Rectifier]
|
| MWI50-12A5 |
IGBT Modules Sixpack
|
IXYS[IXYS Corporation]
|
| MG300Q2YS65H |
300 A, 1200 V, N-CHANNEL IGBT
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor
Toshiba Corporation
|
| MG400J2YS60A |
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
From old datasheet system
|
Toshiba Semiconductor
|
| PSHI50D-06 PSHI50D_06 PSHI50D/06 PSHI50D06 |
IGBT Module
IGBT Module Short Circuit SOA Capability
|
Powersem GmbH
|
| MG600Q1US61 |
TOSHIBA IGBT Module Silicon N Channel IGBT
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
|
Toshiba Semiconductor
|
| FZ1200R17KE3 |
IGBT-Wechselrichter / IGBT-inverter
IGBT Power Module
|
eupec GmbH
|
| IXGE75N100Z IXGE50N90Z IXTE9N65X4U IXGE50N50Z |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1KV V(BR)CES | 75A I(C)
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 900V V(BR)CES | 50A I(C)
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 650V V(BR)DSS | 9A I(D) 晶体管| MOSFET功率模块|独立|650V五（巴西）直| 9A条（丁）
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 500V V(BR)CES | 50A I(C) 晶体管| IGBT功率模块|独立| 500V五（巴西）国际消费电子展| 50A条一（c
|
IXYS, Corp.
|
| 7MBR10SA140 |
IGBT MODULE (S series) 1400V / 10A / PIM 15 A, 1400 V, N-CHANNEL IGBT
|
Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
|
| GP1201FSS18 |
Single Switch Low V IGBT Module 1200 A, 1800 V, N-CHANNEL IGBT
|
Dynex Semiconductor, Ltd.
DYNEX[Dynex Semiconductor]
|
