| PART |
Description |
Maker |
| HW-300A HW-300B |
Shipped in bulk (500pcs per pack).
?igh-sensitivity InSb Hall element, DIP package, Shipped in bulk (500pcs per pack)
|
Electronic Theatre Controls, Inc.
|
| HW-300A |
High-sensitivity InSb Hall element, DIP package, Shipped in bulk (500pcs per pack)
?igh-sensitivity InSb Hall element, DIP package, Shipped in bulk (500pcs per pack)
|
List of Unclassifed Manufacturers
ETC
|
| IDT74FCT845CSO IDT74FCT845CTP IDT74FCT845CD IDT74F |
8-Bit D-Type Latch
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 39 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 29 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 34 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number. 8位D型锁存器
9-Bit D-Type Latch 9位D型锁存器
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET ST package rated at 13 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number. 8位D型锁存器
300V Single N-Channel HEXFET Power MOSFET in a SO-8 package 9位D型锁存器
|
NXP Semiconductors N.V.
Austriamicrosystems AG
Coilcraft, Inc.
Fairchild Semiconductor, Corp.
|
| T10A120T T10A130B T10A200T T10A240T T10A270B |
T10A series SiBOD, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 2uA @ Vrm = 108V,max. Ir = 50uA @ Vr = 120V,max, Tape and reeled (1500pcs).
T10A series SiBOD, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 2uA @ Vrm = 117V,max. Ir = 50uA @ Vr = 130V,max, Bulk (500pcs).
T10A series SiBOD, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 2uA @ Vrm = 180V,max. Ir = 50uA @ Vr = 200V,max, Tape and reeled (1500pcs).
T10A series SiBOD, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 2uA @ Vrm = 216V,max. Ir = 50uA @ Vr = 240V,max, Tape and reeled (1500pcs).
T10A series SiBOD, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 2uA @ Vrm = 243V,max. Ir = 50uA @ Vr = 270V,max, Bulk (500pcs).
|
Littelfuse
|
| ST47-60T1MIE3 ST560-25T2KI ST32ETA503 ST15-100T1KI |
ST SuperTan® Wet Tantalum Capacitors with Hermetic Seal
Cap Tant Wet 560uF 25V 10% (7.92 X 17.88mm) Axial 0.83 Ohm 125C Bulk
Res Cermet Trimmer 50K Ohm 20% 1/8W 1(Elec)/1(Mech)Turn 1.9mm (3.4 X 3.5 X 2mm) J-Hook SMD T/R
CAP 15UF 100VDC 20% 5.56 X 13.08MM AXL - Bulk
SCR PHASE CONT 600V 280A TO-93
Cap Tant Wet 10uF 125V 10% (4.78 X 11.51mm) Axial 5.5 Ohm 125C Bulk
CAP 10UF 125VDC 20% 4.78 X 11.51MM AXL - Bulk
CAP WET TANT 1200UF±20%V
CAP 330UF 75VDC 20% 10.31 X 21.03MM AXL - Bulk
CAP 33UF 75VDC 10% 4.78 X 11.51MM AXL - Bulk
CAP 150UF 60VDC 10% 7.92 X 17.88MM AXL - Bulk
Cap Tant Wet 220uF 100V 20% (10.31 X 28.6mm) Axial 1.2 Ohm 125C Bulk
|
Vishay Sprague
Vishay Semiconductors
|
| BSR17A BSR17 BSR17A-MR BSR17AD87Z |
NPN General Purpose Amplifier
TRANSISTOR BSR17A MINIREEL 500PCS
|
FAIRCHILD[Fairchild Semiconductor]
|
| CKR06BX104KR |
Lead length shown is for parts supplied in bulk. See packaging specifications for lead lengths when not provided in bulk
|
Kemet Corporation
|
| LT1576IS8-5SYNC LT1576IS8-SYNC LT1576CS8-SYNC LT15 |
1.5A/ 200kHz Step-Down Switching Regulator
MM,62.5M,BREAKOUT STYLE BULK FO CBL - 24FIBER 100
MM,62.5M,BREAKOUT STYLE BULK FO CBL - 12FIBER 100
CAP 100UF 25V ELECT TG SMD
MM,62.5M,DIST STYLE,BULK FO CABLE - 12FIB 1000FT
MM,62.5M,DIST STYLE,BULK FO CABLE - 4FIB 500FT
CAP 220UF 16V ELECT TG SMD
CAP 330UF 16V ELECT TG SMD
CAP 220UF 25V ELECT TG SMD
MM,62.5M,BREAKOUT STYLE BULK FO CBL - 24FIBER 100 3.5 A SWITCHING REGULATOR, 240 kHz SWITCHING FREQ-MAX, PDSO8
|
Linear Technology Corporation
Linear Technology, Corp.
|
| G8605-25 G8605 G8605-11 G8605-12 G8605-13 G8605-15 |
Aluminum Snap-In Capacitor; Capacitance: 390uF; Voltage: 420V; Case Size: 30x40 mm; Packaging: Bulk 铟镓砷PIN光电二极
Aluminum Snap-In Capacitor; Capacitance: 220uF; Voltage: 420V; Case Size: 25x35 mm; Packaging: Bulk 铟镓砷PIN光电二极
Aluminum Snap-In Capacitor; Capacitance: 680uF; Voltage: 420V; Case Size: 35x50 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 220uF; Voltage: 420V; Case Size: 30x30 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 470uF; Voltage: 420V; Case Size: 30x45 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 330uF; Voltage: 420V; Case Size: 35x30 mm; Packaging: Bulk
InGaAs PIN photodiode
|
Hamamatsu Photonics K.K.
HAMAMATSU[Hamamatsu Corporation]
|
| AM28F010A AM28F010A-120EC AM28F010A-120ECB AM28F01 |
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory with Embedded Algorithms
0.5MM, ZIF, SMT, 42 POSITION, EMBOSS TAPE T&R RoHS Compliant: Yes
CAP 100PF 1500V 20% NP0(C0G) SMD-1808 TR-13 PLATED-NI/SN
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位）CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位28亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 200 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 120 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 90 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 150 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PDSO32
|
Advanced Micro Devices, Inc.
SPANSION LLC
ADVANCED MICRO DEVICES INC
|
| XO63CREANA20M XO63DTEANA24M XO63CREANA40M |
XOSM-533 20M BRE B04 E4 - Bulk
XOSM-533 24M AE B04 E4 - Bulk
XO, Clock, CRYSTAL OSCILLATOR, CLOCK, 40 MHz, HCMOS OUTPUT, HALOGEN FREE AND ROHS COMPLIANT, ULTRA MINIATURE PACKAGE-4
|
Vishay Dale
|
|
