PART |
Description |
Maker |
IRFF120 IRFF121 IRFF122 IRFF123 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 5.0A. N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 5.0A. N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 50V. Continuous drain current 6.0A. N-CHANNEL ENHANCEMENT-MODE POWER MOS FIELD-EFFECT TRANSISTORS
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General Electric Solid State GE Solid State
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IRFF110 IRFF111 IRFF112 IRFF113 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.0A. N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.0A. Power MOS Field-Effect Transistors N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.5A.
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General Electric Solid State GE Solid State
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PTF10020 |
2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET 125 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor 125 Watts, 86060 MHz GOLDMOS Field Effect Transistor
|
ERICSSON POWER MODULES AB Ericsson Microelectronics
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UPA1811 UPA1811GR-9JG D11820EJ1V0DS00 |
4 A, 20 V, 0.12 ohm, P-CHANNEL, Si, POWER, MOSFET POWER, TSSOP-8 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING From old datasheet system
|
NEC, Corp. NEC[NEC]
|
2SK3079A |
Field Effect Transistor Silicon N Channel MOS Type 470 MHz Band Amplifier Applications TRANSISTOR,MOSFET,N-CHANNEL,10V V(BR)DSS,3A I(D),RFMOD TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
|
Toshiba. TOSHIBA[Toshiba Semiconductor]
|
H02N60SJ H02N60S H02N60SE H02N60SF H02N60SI |
N-Channel Power Field Effect Transistor
|
HSMC CORP. HSMC[Hi-Sincerity Mocroelectronics] Hi-Sincerity Mocroelectronics Corp.
|
H04N60F H04N60E H04N60 |
N-Channel Power Field Effect Transistor
|
Hi-Sincerity Mocroelectronics Corp. HSMC[Hi-Sincerity Mocroelectronics]
|
PHP96NQ03LT PHD96NQ03LT PHB96NQ03LT |
N-channel enhancement mode field-effect transistor 75 A, 25 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
|
NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
|
PSMN008-75P PSMN008-75B |
N-channel enhancement mode field-effect transistor 75 A, 75 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
|
NDB6020PNL |
P-Channel Logic Level Enhancement Mode Field Effect Transistor 24 A, 20 V, 0.05 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
|
Fairchild Semiconductor, Corp.
|