| PART |
Description |
Maker |
| GS8640ZV18T-250I GS8640ZV18GT-167I GS8640ZV18T-300 |
72Mb NBT SRAMs
72Mb Pipelined and Flow Through Synchronous NBT SRAM
|
GSI[GSI Technology]
|
| K7I643684M-EI25 K7I643684M-EI30 K7I641884M-CI30 K7 |
72Mb DDRII SRAM Specification 72Mb SRAM的规范条DDRII
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| GS8644Z18E-133IV GS8644Z18E-150IV GS8644Z18E-200I |
72Mb Pipelined and Flow Through Synchronous NBT SRAM
|
GSI[GSI Technology]
|
| GS8642ZV18B-300I GS8642ZV18B-167I GS8642ZV18GB-167 |
72Mb Pipelined and Flow Through Synchronous NBT SRAM
|
GSI[GSI Technology]
|
| GS86422V72 GS8642V36 GS8642V18 |
72Mb Burst SRAMs
|
GSI Technology
|
| GS864218 GS864236 GS8642272 |
72Mb Burst SRAMs
|
GSI Technology
|
| GS864418E-200IV GS864418E-200V GS864418E-133IV GS8 |
4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs
|
GSI[GSI Technology]
|
| GS8644V18B-166 GS8644V18B-250 GS8644V18B-250I GS86 |
4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
|
GSI[GSI Technology]
|
| GS864018T-XXXV |
(GS8640xxGT-xxxV) 4M x 18/ 2M x 32/ 2M x 36 72Mb Sync Burst SRAMs
|
GSI Technology
|
| GS8644Z36E-166V GS8644Z18E-225V GS8644Z36E-225V |
72Mb Pipelined and Flow Through Synchronous NBT SRAM 2M X 36 ZBT SRAM, 7 ns, PBGA165
72Mb Pipelined and Flow Through Synchronous NBT SRAM 4M X 18 ZBT SRAM, 6.5 ns, PBGA165
72Mb Pipelined and Flow Through Synchronous NBT SRAM 2M X 36 ZBT SRAM, 6.5 ns, PBGA165
|
GSI Technology, Inc.
|
| GS864436E-166V GS864418E-150 GS864418E-225 GS86443 |
4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs 2M X 36 CACHE SRAM, 7 ns, PBGA165
4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs 4M X 18 CACHE SRAM, 7.5 ns, PBGA165
4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs 4M X 18 CACHE SRAM, 6.5 ns, PBGA165
4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs 2M X 36 CACHE SRAM, 6.5 ns, PBGA165
|
GSI Technology, Inc.
|
