| PART |
Description |
Maker |
| K7I643684M-EI25 K7I643684M-EI30 K7I641884M-CI30 K7 |
72Mb DDRII SRAM Specification 72Mb SRAM的规范条DDRII
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| GS8641ZV18 GS8641ZV32 GS8641ZV36 GSITECHNOLOGY-GS8 |
72Mb NBT SRAMs
|
GSI Technology
|
| GS8642Z18 GS8642Z36 |
72Mb NBT SRAMs
|
GSI Technology
|
| GS864118 GS864132 GS864136 |
72Mb Burst SRAMs
|
GSI Technology
|
| GS864272C-167V GS864272C-250IV GS864272C-200V GS86 |
4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs 1M X 72 CACHE SRAM, 8 ns, PBGA209
4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs 1M X 72 CACHE SRAM, 6.5 ns, PBGA209
4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs 1M X 72 CACHE SRAM, 7.5 ns, PBGA209
4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs 4M X 18 CACHE SRAM, 8 ns, PBGA119
4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs 4M X 18 CACHE SRAM, 6.5 ns, PBGA119
|
GSI Technology, Inc.
|
| GS8640E18T-200IV GS8640E18T-250V GS8640E18T-200V G |
4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
|
GSI[GSI Technology]
|
| GS864218B-167IV GS864218B-167V GS864218B-200IV GS8 |
4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
|
GSI[GSI Technology]
|
| GS8640Z36T-200 GS8640Z36T-300I |
72Mb Pipelined and Flow Through Synchronous NBT SRAM
|
http://
|
| GS8640Z18T-250I GS8640Z18T GS8640Z18T-167 GS8640Z1 |
72Mb Pipelined and Flow Through Synchronous NBT SRAM
|
GSI[GSI Technology]
|
| GS8640ZV36T-300I GS8640ZV36T-200 |
72Mb Pipelined and Flow Through Synchronous NBT SRAM
|
http://
|
