| PART |
Description |
Maker |
| GS74104J-12 GS74104J-10 GS74104J-10I GS74104J-12I |
10ns 1M x 4 4Mb asynchronous SRAM
8ns 1M x 4 4Mb asynchronous SRAM
12ns 1M x 4 4Mb asynchronous SRAM
|
http://
GSI Technology
|
| GS840FH18AT-10 GS840FH18AT-10I GS840FH18AT-12 GS84 |
10ns 256K x 18 4Mb sync burst SRAM
12ns 256K x 18 4Mb sync burst SRAM
8.5ns 256K x 18 4Mb sync burst SRAM
8ns 256K x 18 4Mb sync burst SRAM
10ns 128K x 32 4Mb sync burst SRAM
|
GSI Technology
|
| GS74108AGX-12I GS74108AJ-12I GS74108AJ-10I GS74108 |
512K x 8 4Mb Asynchronous SRAM 512K X 8 STANDARD SRAM, 12 ns, PDSO36
512K x 8 4Mb Asynchronous SRAM 512K X 8 STANDARD SRAM, 10 ns, PDSO36
512K x 8 4Mb Asynchronous SRAM 512K X 8 STANDARD SRAM, 12 ns, PDSO44
512K x 8 4Mb Asynchronous SRAM 512K X 8 STANDARD SRAM, 10 ns, PBGA48
512K x 8 4Mb Asynchronous SRAM 512K X 8 STANDARD SRAM, 8 ns, PDSO44
512K x 8 4Mb Asynchronous SRAM 512K X 8 STANDARD SRAM, 8 ns, PDSO36
|
SRAM
GSI Technology, Inc.
|
| M59PW064 M59P064110N1T M59P064100M1T M59P064100N1T |
64 Mbit (4Mb x16, Uniform Block) 3V Supply LightFlash Memory 64兆位Mb的x16插槽，统一座）3V电源LightFlash记忆
64 Mbit (4Mb x16, Uniform Block) 3V Supply LightFlash Memory
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| GS74104J GS74104TP |
1M x 4 4Mb Asynchronous SRAM
|
GSI Technology
|
| RMLV0416EGBG-5S2 RMLV0416EGSB-5S2 RMLV0416EGBG-4S2 |
4Mb Advanced LPSRAM
|
Renesas Electronics Corporation
|
| GS74104ATJ |
1M x 4 4Mb Asynchronous SRAM
|
GSI Technology
|
| GS74117AX-8I GS74117AX GS74117AX-10 GS74117AX-10I |
256K x 16 4Mb Asynchronous SRAM
|
GSI[GSI Technology]
|
| GS74108AJ-8 GS74108ATP-10 GS74108ATP-10I GS74108AT |
512K x 8 4Mb Asynchronous SRAM
|
GSI[GSI Technology]
|
| KMM5328004CSW |
8MB X 32 DRAM Simm Using 4MB X 16
|
Samsung Semiconductor
|
| GS842Z18AB-180I GS842Z18AB-100 GS842Z18AB-100I GS8 |
4Mb Pipelined and Flow Through Synchronous NBT SRAMs 256K X 18 ZBT SRAM, 8 ns, PBGA119
4Mb Pipelined and Flow Through Synchronous NBT SRAMs 256K X 18 ZBT SRAM, 12 ns, PBGA119
4Mb Pipelined and Flow Through Synchronous NBT SRAMs 128K X 36 ZBT SRAM, 8 ns, PBGA119
4Mb Pipelined and Flow Through Synchronous NBT SRAMs 256K X 18 ZBT SRAM, 10 ns, PBGA119
4Mb Pipelined and Flow Through Synchronous NBT SRAMs 256K X 18 ZBT SRAM, 8.5 ns, PBGA119
|
GSI Technology, Inc.
|
| ST6232BQ3/XXX |
4Mb Boot Block Flash 8位微控制
|
STMicroelectronics N.V.
|
