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EDI8M32128C35GB - HIGH PERFORMANCE FOUR MEGABIT SRAM MODULE

EDI8M32128C35GB_631414.PDF Datasheet

 
Part No. EDI8M32128C35GB EDI8M32128C20GB EDI8M32128C20GC EDI8M32128C25GB EDI8M32128C25GC EDI8M32128C55GC EDI8M32128C EDI8M32128C35GC EDI8M32128C45GB EDI8M32128C45GC EDI8M32128C55GB
Description HIGH PERFORMANCE FOUR MEGABIT SRAM MODULE

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EDI8M32128C35GB EDI8M32128C35GC EDI8M32128C45GC HIGH PERFORMANCE FOUR MEGABIT SRAM MODULE 高性能4兆位的SRAM模块
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Bipolar Transistor; Collector Emitter Voltage, Vceo:350V; Transistor Polarity:NPN; Power Dissipation:1W; DC Current Gain Min (hfe):40; Collector Current:1A; Package/Case:3-TO-39; DC Current Gain Max (hfe):60; Terminal Type:5
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