| PART |
Description |
Maker |
| MRFG35005MT106 08051J0R1BBT 100A101JP500X 100B101J |
Gallium Arsenide PHEMT RF Power Field Effect Transistor
|
Freescale Semiconductor, Inc
Freescale Semiconductor...
|
| MRFG35002N6T1 |
GALLIUM ARSENIDE PHEMT RF POWER FIELD EFFECT TRANSISTOR
|
Freescale Semiconductor, Inc
|
| MRFG35003N6AT1 |
Gallium Arsenide PHEMT RF Power Field Effect Transistor
|
Freescale Semiconductor, Inc
|
| MRFG35003MT1 |
MRFG35003MT1 3.5 GHz, 3 W, 12 V Power FET GaAs PHEMT
The RF GaAs Line GALLIUM ARSENIDE PHEMT RF POWER FIELD EFFECT TRANSISTOR
|
MOTOROLA[Motorola, Inc]
|
| MRFG35003MT1 |
The RF GaAs Line GALLIUM ARSENIDE PHEMT RF POWER FIELD EFFECT TRANSISTOR
|
Motorola, Inc.
|
| L680 DGSK8-025A DGS3-025AS DGS4-025A |
Gallium Arsenide Schottky Rectifier 5.4 A, 250 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-220AC
Gallium Arsenide Schottky Rectifier 5.4 A, 250 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-220AB
From old datasheet system
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| DGS10-022AS |
Gallium Arsenide Schottky Rectifier 9 A, 220 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-263AB
|
IXYS, Corp.
|
| MGRB2018CT_D ON1883 MGRB2018CT MGRB2018 |
Power Manager Gallium Arsenide Power Rectifier
From old datasheet system
GALLIUM ARSENIDE RECTIFIER 20 AMPERES 180 VOLTS
|
MOTOROLA[Motorola, Inc]
ON Semi
|
| WP710A10ID5V |
The High Efficiency Red source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode.
|
Kingbright Corporation
|
| WP710A10YD5V |
The Yellow source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Yellow Light Emitting Diode.
|
Kingbright Corporation
|
| GN04005 |
Gallium Arsenide Devices
|
Panasonic
|
