| PART |
Description |
Maker |
| RFP10P12 RFM10P15 |
(RFP10P12 / RFP10P15) P-CHANNEL ENHANCEMENT - MODE POWER FIELD-EFFECT TRANSISTORS
(RFM10P12 / RFM10P15) P-CHANNEL ENHANCEMENT - MODE POWER FIELD-EFFECT TRANSISTORS
|
GE Solid State
|
| IRFF110 IRFF111 IRFF112 IRFF113 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.0A.
Power MOS Field-Effect Transistors
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.5A.
|
General Electric Solid State
GE Solid State
|
| IRF530_D ON0283 IRF530-D IRF530/D |
100V4A TMOS Power Field Effect Transistor （N-Channel Enhancement Mode Silicon Gate100V4A TMOS功率场效应管（N沟道增强型硅门）)
TMOS POWER FET 14 AMPERES
From old datasheet system
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola, Inc.
ON Semiconductor
|
| SSM3J14T |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) Power Management Switch DC-DC Converters
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| MAPLST1617-030CF |
RF Power Field Effect Transistor
|
Tyco Electronics
|
| MTM40N20 |
Power Field Effect Transistor
|
New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conduct...
|
| MRF19125 MRF19125R3 MRF19125SR3 |
RF Power Field Effect Transistors
|
Freescale Semiconductor, Inc
|
| MRF141 |
RF FIELD-EFFECT POWER TRANSISTOR
|
Advanced Semiconductor
|
| VN30ABA VN35ABA |
Field Effect Power Transistor
|
General Electric Solid State
|
| MTP6N10 |
POWER FIELD EFFECT TRANSISTOR
|
MOTOROLA[Motorola, Inc]
|
| MTP12N10L |
Power Field Effect Transistor
|
New Jersey Semi-Conductor P...
|
