| PART |
Description |
Maker |
| 310-024105-021 024105-021 |
Filtered Low Noise Ampli er
|
API Technologies Corp
Spectrum Microwave, Inc.
|
| LT6604CUFF-5PBF |
Dual Very Low Noise, Differential Ampli?er and 5MHz Lowpass Filter
|
Linear Technology
|
| 2N526 |
PNP germanium transistor for switching and ampli-fier applications in the audio-frequency range
|
New Jersey Semi-Conductor Products, Inc.
|
| RMPA61810 |
6-18 GHz 1W Power Amp
Single Channel 6-18 GHz 1 Watt Power Amplifier MMIC
|
FAIRCHILD[Fairchild Semiconductor]
|
| PE9304_06 9304-00 9304-01 9304-11 PE9304 PE930406 |
1- 7 GHz Low Power CMOS Divide-by-2 Prescaler
1 GHz - 7 GHz Low Power UltraCMOS Divide-by-2 Prescaler Rad-hard for Space Applications
|
Peregrine Semiconductor Cor...
PEREGRINE[Peregrine Semiconductor Corp.]
Peregrine Semiconductor...
|
| RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-00 |
3.4-3.6 GHz Power Amplifier 3400 MHz - 3600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
3.4-3.6 GHz Power Amplifier 3号至三月六日GHz功率放大
Single-band power amplifiers
The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
|
| FMPA2151 |
2.4-2.5 GHz and 4.9-5.9 GHz Dual Band Linear Power Amplifier Module
|
http://
FAIRCHILD[Fairchild Semiconductor]
|
| AGR18045E |
45 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor
|
TriQuint Semiconductor
|
| AGR18090E AGR18090EF AGR18090EU |
90 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor
|
TriQuint Semiconductor
|
| 5-211111-4 |
Subminiature D Pin/Socket Connectors for MIL-C-24308 and MIL-C-39029; AMPLI,SHELL,PLUG 11C1 ( AMP )
|
Tyco Electronics
|
