| PART |
Description |
Maker |
| M58LW128B150N6T M58LW128B150N1T M58LW128A150N6E M5 |
8M X 16 FLASH 3V PROM, 150 ns, PDSO56
128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories 128兆位Mb x16Mb的X32号，统一座，突发3V电源闪存
128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories 128兆位8Mb x16Mb的X32号，统一座，突发3V电源闪存
RECEPTACLE HOUSING, 5WAY
|
ST Microelectronics
STMicroelectronics N.V.
意法半导
|
| M58LW032D04 M58LW032D110N6 M58LW032D110ZA6 M58LW03 |
32 Mbit (4Mb x8, 2Mb x16, Uniform Block) 3V Supply Flash Memory
32 MBIT (4MB X8, 2MB X16, UNIFORM BLOCK)3V SUPPLY FLASH MEMORY
|
STMicroelectronics
ST Microelectronics
|
| M58LW128BZA M58LW128A M58LW128A150N1E M58LW128A150 |
128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories
|
STMICROELECTRONICS[STMicroelectronics]
|
| M58LW064B M58LW064A 7239 |
64 Mbit (4Mb x16 or 2Mb x32, Uniform Block) 3V Supply Flash Memories
From old datasheet system
|
STMicroelectronics
|
| M28W640FSU M28W640FSU-ZA M28W640FSU-ZAE M28W640FSU |
32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Uniform Block, Secure Flash Memories
|
STMICROELECTRONICS[STMicroelectronics]
|
| M29KDCL3-32T M29KW032E110N1T M29KW032E110N3T M29KW |
32 Mbit 2Mb x16, Uniform Block 3V Supply LightFlashMemory 32兆位Mb x16插槽，统一V电源LightFlash⑩记
32 Mbit 2Mb x16, Uniform Block 3V Supply LightFlash?/a> Memory
32 Mbit 2Mb x16, Uniform Block 3V Supply LightFlash Memory
|
STMicroelectronics N.V.
意法半导
|
| M27V320-150N6 M27V320 M27V320-100M1 M27V320-100M6 |
2.5-V/3.3-V 20-Bit Buffers/Drivers With 3-State Outputs 56-SSOP -40 to 85 32兆位4Mb的x8或检察官办公室的2Mb x16存储
2.5-V/3.3-V 20-Bit Buffers/Drivers With 3-State Outputs 56-TVSOP -40 to 85
32 Mbit 4Mb x8 or 2Mb x16 OTP EPROM
32 MBIT (4MB X8 OR 2MB X16) OTP EPROM
|
SGS Thomson Microelectronics
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M36WT8B10ZA6T M36WV8B10ZA6T M36WT864T85ZA6T M36WV8 |
64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
64 Mbit 4Mb x16 / Multiple Bank / Burst Flash Memory and 8 Mbit 512K x16 SRAM / Multiple Memory Product
64 MBIT (4MB X16, MULTIPLE BANK, BURST) FLASH MEMORY AND 8 MBIT (512K X16) SRAM, MULTIPLE MEMORY PRODUCT
|
ST Microelectronics
|
| M29DW324DT M29DW324DB 8730 M29DW324DT90ZE6T M29DW3 |
32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory
From old datasheet system
32 MBIT (4MB X8 OR 2MB X16, DUAL BANK 16:16, BOOT BLOCK) 3V SUPPLY FLASH MEMORY
|
STMICROELECTRONICS[STMicroelectronics]
|
| M29W641DH12ZA1E M29W641DH12ZA1F M29W641DH12ZA6E M2 |
4M X 16 FLASH 3V PROM, 70 ns, PDSO48
Low-Power Single Bus Buffer Gate with 3-State Output 5-SC70 -40 to 85 64兆位4Mb的x16插槽，统一3V电源快闪记忆
64 Mbit 4Mb x16, Uniform Block 3V Supply Flash Memory 64兆位4Mb的x16插槽，统一3V电源快闪记忆
64 Mbit 4Mb x16, Uniform Block 3V Supply Flash Memory 64兆位4Mb的x16插槽，统一V电源快闪记忆
Low-Power Single 2-Input Positive-AND Gate 5-SC70 -40 to 85 64兆位4Mb的x16插槽，统一V电源快闪记忆
Low-Power Single Schmitt-Trigger Buffer 5-SOT-23 -40 to 85 64兆位4Mb的x16插槽，统一V电源快闪记忆
Shielded Multiconductor Cable; Number of Conductors:25; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes; Conductor Material:Copper RoHS Compliant: Yes
Shielded Multiconductor Cable; Number of Conductors:15; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes; Conductor Material:Copper RoHS Compliant: Yes
Shielded Multiconductor Cable; Number of Conductors:10; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes; Conductor Material:Copper RoHS Compliant: Yes
Low-Power Single 2-Input Positive-AND Gate 5-SOT-23 -40 to 85
Shielded Multiconductor Cable; Number of Conductors:10; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Material:Polyvinylchloride (PVC); Shielding Material:Aluminum Foil/Polyester Tape/Tinned Copper Braid RoHS Compliant: Yes
64 Mbit 4Mb x16 / Uniform Block 3V Supply Flash Memory
Low-Power Single Buffer/Driver with Open-Drain Outputs 5-DSBGA -40 to 85
|
NUMONYX
STMicroelectronics N.V.
意法半导
ST Microelectronics
|
| M27V322-100F1 M27V322-150XP6 M27V322 M27V322-100B1 |
32 Mbit 2Mb x16 Low Voltage UV EPROM and OTP EPROM
32 Mbit 4Mb x8 or 2Mb x16 OTP EPROM
Fuses, 150mA 250V SB 5X15 BULK
32 Mbit 2Mb x16 Low Voltage UV EPROM and OTP EPROM 32兆位Mb x16低压紫外线EPROM和检察官办公室存储器
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
