PART |
Description |
Maker |
M57959 M57959L |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V From old datasheet system HYBRID IC FOR DRIVING IGBT MODULES
|
MITSUBISHI[Mitsubishi Electric Semiconductor] ETC Mitsubishi Electric Corporation
|
MID400-12E4T |
IGBT Modules: Boost Configurated IGBT Modules
|
IXYS
|
MID100-12A3 MII100-12A3 |
IGBT Modules: Boost Configurated IGBT Modules
|
IXYS Corporation
|
SEMIX202GB128DS08 |
SPT IGBT Modules 190 A, 1200 V, N-CHANNEL IGBT
|
Semikron International http://
|
SEMIX253GB126HDS |
Trench IGBT Modules 260 A, 1200 V, N-CHANNEL IGBT
|
Semikron International
|
SKM195GAL066D |
Trench IGBT Modules 265 A, 600 V, N-CHANNEL IGBT
|
SEMIKRON
|
SEMIX202GB066HDS08 |
Trench IGBT Modules 270 A, 600 V, N-CHANNEL IGBT
|
Semikron International
|
SEMIX503GB126HDS |
Trench IGBT Modules 480 A, 1200 V, N-CHANNEL IGBT
|
SEMIKRON[Semikron International]
|
SEMIX453GB12T4S |
Trench IGBT Modules 685 A, 1200 V, N-CHANNEL IGBT
|
SEMIKRON
|
RM30TA-H RM30TPM-M RM30TA-M |
MITSUBISHI DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
Mitsubishi Electric Corporation
|