| PART |
Description |
Maker |
| BL0709-18-76 |
28 mm x 28 mm LED cluster. Super bright red (peak wavelength 660 nm), blue (peak wavelength 430 nm), super bright green (peak wavelength 565 nm). Lens type water clear.
|
Kingbright Electronic
|
| BT138F-600 BT138F |
600V Vdrm 12A Triac, 1.65V Peak On-State Voltage, 2.0mA Repetitive Peak Off-State Current
Bi-Directional Triode Thyristor
|
SEMIWELL[SemiWell Semiconductor]
|
| APTB1615EYC |
1.6 x 1.5 mm bi-color SMD chip LED lamp. High efficiency red (peak wavelength 627 nm), yellow (peak wavelength 590 nm). Lens type water clear.
|
Kingbright Electronic
|
| STK5434 STK5422 STK5361L STK5362 |
Metal Oxide Varistor (MOV); Voltage Rating AC, Vrms:115Vrms; Voltage Rating DC, Vdc:153VDC; Peak Surge Current (8/20uS), Itm:4500A; Clamping Voltage 8/20us Max :300V; Peak Energy (10/1000uS):35J; Capacitance, Cd:1100pF
Varistor; Voltage Rating AC, Vrms:105Vrms; Voltage Rating DC, Vdc:144VDC; Peak Surge Current (8/20uS), Itm:100A; Clamping Voltage 8/20us Max :310V; Peak Energy (10/1000uS):0.6J; Capacitance, Cd:27pF; Package/Case:3mm Axial
Metal Oxide Varistor (MOV); Voltage Rating AC, Vrms:175Vrms; Voltage Rating DC, Vdc:225VDC; Peak Surge Current (8/20uS), Itm:6500A; Clamping Voltage 8/20us Max :455V; Peak Energy (10/1000uS):90J; Capacitance, Cd:1400pF 模拟IC
|
Littelfuse, Inc.
|
| OED-PT8L OED-PT304R2 OED-PT23G |
PHOTOTRANSISTOR | DARLINGTON | 800NM PEAK WAVELENGTH | 5M | LED-2B
PHOTOTRANSISTOR | DARLINGTON | 850NM PEAK WAVELENGTH | 5M | LED-7B
PHOTOTRANSISTOR | DARLINGTON | 800NM PEAK WAVELENGTH | 5M | LED-7B 光电晶体管|达林顿| 800NM峰值波长| 500万|发光二极 7B
|
Lumex, Inc.
|
| P6KE18A P6KE22 P6KE36A P6KE6.8A P6KE7.5A P6KE160 P |
600 Watt peak power transient voltage suppressor. Reverse stand-off voltage VRWM = 138.00 V. Test current IT = 1 mA.
TRANSIENT VOLTAGE SUPPRESSOR BREAKDOWN VOLTAGE:6.8-440V PEAK PULSE POWER: 600W
2.5-V 460-Kbps RS-232 Transceiver With /-15-kV ESD Protection 20-TSSOP -40 to 85
600 WATT PEAK POWER TRANSIENT VOLTAGE SUPPRESSORS 600瓦特峰值功率瞬态电压抑制器
Power Amplifier Driver 32-VQFN -40 to 85 600瓦特峰值功率瞬态电压抑制器
600 Watt peak power transient voltage suppressor. Reverse stand-off voltage VRWM = 284.00 V. Test current IT = 1 mA.
|
Shanghai Sunrise Electronics
Bytes
|
| BD814 BD844 |
SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):65A; Peak Non Repetitive Surge
SCR Thyristor; SCR Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):8A; Peak Non Repetitive Surge Current, Itsm:100A; Gate Trigger Current Max, Igt:200uA 晶体管|晶体管|进步党| 80V的五（巴西）总裁| 1.5AI（丙）|02AA
|
Teridian Semiconductor, Corp.
|
| C122N |
Silicon controlled rectifier. Reverse blocking triode thyristor. 8 A RMS. Repetitive peak off-state voltage and repetitive peak reverse voltage 800 V.
|
Motorola
|
| 30KW258A 30KW168 30KW168A 30KW216 30KW240 30KW240A |
258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
|
MDE Semiconductor
|
| ZXGD3001E6 ZXGD3001E6TA ZXGD3001E6-15 |
9A(PEAK) GATE DRIVER IN SOT26
9A(peak) Gate driver in SOT23-6
|
Diodes Incorporated
Zetex Semiconductors
|
