| PART |
Description |
Maker |
| C4D10120H |
Silicon Carbide Schottky Diode Z-Rec Rectifier
|
Cree, Inc
|
| GBPC25005W GBPC2501 GBPC2510 GBPC2510W GBPC25005 G |
Dual General-Purpose Operational Amplifier 8-SOIC 0 to 70
25A GLASS PASSIVATED BRIDGE RECTIFIER
8 A, 5-V Input Non-Isolated Wide-Output Adjust SIP Module w/Auto-Track 8-SIP MODULE -40 to 85 25 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE
50-A, 8-V to 14-V Input, Non-Isolated, Wide-Output Adjust, Vertical Power Module 21-DIP MODULE -40 to 85 25 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
Isolated Flyback Switching Regulator with 9V Output 25 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE
|
DIODES[Diodes Incorporated]
Diodes Inc.
Diodes, Inc.
|
| BA7180 BA7180AFS BA7180AS A5800905 BA7180AS/AFS BA |
Video LSIs > VCR video signal processor > PRE/REC amplifier
From old datasheet system
2-channel PRE / REC amplifier with auto-tracking interface
|
ROHM[Rohm]
Rohm CO.,LTD.
|
| 161CNQ...SERIES 161CNQ045 161CNQ035 161CNQ 161CNQ0 |
45V 160A Schottky Common Cathode Diode in a TO-249AA Non-Isolated package
40V 160A Schottky Common Cathode Diode in a TO-249AA Non-Isolated package
35V 160A Schottky Common Cathode Diode in a TO-249AA Non-Isolated package
SCHOTTKY RECTIFIER 160 Amp
|
IRF[International Rectifier]
|
| CD421690B CD421290B CD421890B CD420890B CD421490B |
POW-R-BLOK Dual SCR/Diode Isolated Module 90 Amperes / Up to 1800 Volts
Dual SCR/Diode Isolated Module
|
Power Integrations, Inc.
Powerex Power Semicondu...
|
| DSEP30-06CR |
HiPerDynFREDTM Epitaxial Diode with soft recovery (Electrically Isolated Back Surface) 30 A, 600 V, SILICON, RECTIFIER DIODE
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| 153CMQSERIES 153CMQ 153CMQ100 153CMQ080 |
100V 150A Schottky Common Cathode Diode in a D-60 (Isolated) package
80V 150A Schottky Common Cathode Diode in a D-60 (Isolated) package
SCHOTTKY RECTIFIER 150 Amp
|
IRF[International Rectifier]
|
| 201CNQ045 201CNQ 201CNQ035 201CNQ040 |
SCHOTTKY RECTIFIER
35V 200A Schottky Common Cathode Diode in a TO-244AB Non-Isolated package
40V 200A Schottky Common Cathode Diode in a TO-244AB Non-Isolated package
45V 200A Schottky Common Cathode Diode in a TO-244AB Non-Isolated package
|
IRF[International Rectifier]
|
| 1N5223BT50R 1N5231BTR 1N5231BT26A 1N5231BT50A 1N52 |
surface mount silicon Zener diodes 6.2 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35
16V, 0.5W Zener Diode
33V, 0.5W Zener Diode
12V, 0.5W Zener Diode
13V, 0.5W Zener Diode
10V, 0.5W Zener Diode
25V, 0.5W Zener Diode
22V, 0.5W Zener Diode
30V, 0.5W Zener Diode
15V, 0.5W Zener Diode
27V, 0.5W Zener Diode
6.8V, 0.5W Zener Diode
11V, 0.5W Zener Diode
6.0V, 0.5W Zener Diode
4.7V, 0.5W Zener Diode
8.7V, 0.5W Zener Diode
6.2V, 0.5W Zener Diode
8.2V, 0.5W Zener Diode
9.1V, 0.5W Zener Diode
7.5V, 0.5W Zener Diode
4.3V, 0.5W Zener Diode
3.9V, 0.5W Zener Diode
3.6V, 0.5W Zener Diode
2.4V, 0.5W Zener Diode
3.3V, 0.5W Zener Diode
5.6V, 0.5W Zener Diode
5.1V, 0.5W Zener Diode
2.7V, 0.5W Zener Diode
14V, 0.5W Zener Diode
18V, 0.5W Zener Diode
20V, 0.5W Zener Diode
24V, 0.5W Zener Diode
19V, 0.5W Zener Diode
|
Fairchild Semiconductor, Corp.
|
| K4H560838E-GC/LA2 K4H560838E-GC/LB0 K4H560838E-GC/ |
DIODE ZENER TRIPLE ISOLATED 200mW 39.13Vz 5mA-Izt 0.02518 0.05uA-Ir 30 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 36.28Vz 5mA-Izt 0.02522 0.05uA-Ir 30 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 22.08Vz 5mA-Izt 0.02514 0.05uA-Ir 17 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 12Vz 10mA-Izt 0.02532 0.1uA-Ir 9.1 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER SINGLE 300mW 22.1Vz 5mA-Izt 0.02514 0.05uA-Ir 17 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 13.79Vz 10mA-Izt 0.02503 0.05uA-Ir 11 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER SINGLE 300mW 14Vz 10mA-Izt 0.02503 0.05uA-Ir 11 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER SINGLE 300mW 12.9Vz 10mA-Izt 0.02562 0.1uA-Ir 10 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 11.1Vz 10mA-Izt 0.02523 0.1uA-Ir 8.4 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 19.7Vz 10mA-Izt 0.0251 0.05uA-Ir 15 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER SINGLE 300mW 12Vz 10mA-Izt 0.02532 0.1uA-Ir 9.1 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER SINGLE 300mW 19.7Vz 10mA-Izt 0.0251 0.05uA-Ir 15 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER SINGLE 300mW 23.7Vz 5mA-Izt 0.02509 0.05uA-Ir 19 SOT-23 3K/REEL
DIODE ZENER TRIPLE ISOLATED 200mW 12.88Vz 10mA-Izt 0.02562 0.1uA-Ir 10 SOT-363 3K/REEL
256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)
256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
http://
|
