| PART |
Description |
Maker |
| RFP40N10 RF1S40N10SM RFG40N10 FN2431 |
CAP 180PF 200V 1% NP0(C0G) DIP-2 TUBE-PAK R-MIL-PRF-39014/22 40 A, 100 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
40A/ 100V/ 0.040 Ohm/ N-Channel Power MOSFETs
40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs
40A 100V 0.040 Ohm N-Channel Power MOSFETs
From old datasheet system
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| HUF76633S3S HUF76633P3 HUF76633S3ST HUF76633S3STNL |
38A,100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFETPower MOSFET
38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFET 39 A, 100 V, 0.037 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 39A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 100V的五（巴西）直| 39A条（丁）|63AB
38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFET 39 A, 100 V, 0.037 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
Intersil, Corp.
|
| FSL913A0D FSL913A0D1 FSL913A0D3 FSL913A0R FSL913A0 |
7A, -100V, 0.300 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 7 A, 100 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
7A, -100V, 0.300 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 7A 100V的，0.300欧姆，拉德硬，SEGR性，P通道功率MOSFET
7A/ -100V/ 0.300 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
5A/ -100V/ 0.680 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| RFP12P10 RFP12P08 FN1495 |
12A, 80V and 100V, 0.300 Ohm, P-Channel Power MOSFETs(12A, 80V 100V, 0.300 Ω, P沟道增强模式功率MOS场效应管) 12 A, 80 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
12A/ 80V and 100V/ 0.300 Ohm/ P-Channel Power MOSFETs
12A 80V and 100V 0.300 Ohm P-Channel Power MOSFETs
From old datasheet system
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| FSS913A0R4 FSS913A0D FSS913A0D1 FSS913A0D3 FSS913A |
10A, -100V, 0.280 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
10A/ -100V/ 0.280 Ohm/ Radiation Hardened/ SEGR Resistant/ P-Channel Power MOSFETs
10A, -100V, 0.280 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs 10 A, 100 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AA
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| FRM130D FRM130H FRM130R FN3217 |
14A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFETs 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
From old datasheet system
14A/ 100V/ 0.180 Ohm/ Rad Hard/ N-Channel Power MOSFETs
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| FDP047N10 |
N-Channel PowerTrench MOSFET 100V, 164A, 4.7mOHM
100V N-Channel PowerTrench MOSFET; Package: TO-220; No of Pins: 3; Container: Rail 120 A, 100 V, 0.0047 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fairchild Semiconductor, Corp.
|
| IRF5M5210 IRF5M5210D IRF5M5210UPBF IRF5M5210-15 |
-100V Single P-Channel Hi-Rel MOSFET in a TO-254AA package
34 A, 100 V, 0.07 ohm, P-CHANNEL, Si, POWER, MOSFET
POWER MOSFET P-CHANNEL(Vdss=-100V, Rds(on)=0.07ohm, Id=-34A)
Avalanche Energy Ratings
|
IRF[International Rectifier]
|
| IRHG6110 IRHG63110 IRHG6110P IRHG6110N IRHG6110PBF |
Simple Drive Requirements
100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package
-100V 100kRad Hi-Rel Dual 2N and 2P -Channel TID Hardened MOSFET in a MO-036AB package
RADIATION HARDENED POWER MOSFET
100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY
1 A, 100 V, 0.7 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MO-036AB
|
IRF[International Rectifier]
|
| FDD3690 |
100V N-Channel PowerTrench MOSFET
100V N-Channel PowerTrench MOSFET
DIODE ZENER SINGLE 1000mW 6.8Vz 37mA-Izt 0.05 10uA-Ir 4Vr DO41-GLASS 5K/REEL 22 A, 100 V, 0.064 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
|
http://
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| HUFA75623S3ST HUFA75623P3 HUFA75623S3S |
22A, 100V, 0.064 Ohm, N-Channel, UltraFETPower MOSFETs
22A, 100V, 0.064 Ohm, N-Channel, UltraFET Power MOSFETs
|
FAIRCHILD[Fairchild Semiconductor]
|
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